MIXA61H1200ED IXYS

MIXA 61H1200ED IGBT XPT Module V = 1200 V CES I = 85 A C25 H Bridge V = 1.8 V CE(sat) Preliminary data Part name (Marking on product) MIXA 61H1200ED 13 D1 D5 T1 T5 1 9 2 10 16 E72873 14 D2 D6 T2 T6 3 11 4 12 17 Features: Application: Package: Easy paralleling due to the positive AC motor drives E2-Pac standard outline temperature coefficient of the on-state Solar inverter Insulated copper base plate voltage Medical equipment Soldering pins for PCB mounting Rugged XPT design Uninterruptible power supply (Xtreme light Punch Through) results in: Air-conditioning systems - short circuit rated for 10 sec. Welding equipment - very low gate charge Switched-mode and - square RBSOA 3x I resonant-mode power supplies C - low EMI Thin wafer technology combined with the XPT design results in a competitive low V CE(sat) SONIC diode - fast and soft reverse recovery - low operating forward voltage IXYS reserves the right to change limits, test conditions and dimensions. 20110509a 2011 IXYS All rights reserved 1 - 6MIXA 61H1200ED Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions min. typ. max. Unit collector emitter voltage V T = 25C 1200 V CES VJ max. DC gate voltage V continuous 20 V GES V max. transient collector gate voltage transient 30 V GEM I collector current T = 25C 85 A C25 C I T = 80C 60 A C80 C total power dissipation P T = 25C 290 W tot C collector emitter saturation voltage V I = 55 A V = 15 V T = 25C 1.8 2.1 V CE(sat) C GE VJ T = 125C 2.1 V VJ gate emitter threshold voltage V I = 2 mA V = V T = 25C 5.4 6.0 6.5 V GE(th) C GE CE VJ collector emitter leakage current I V = V V = 0 V T = 25C 0.5 mA CES CE CES GE VJ T = 125C 0.2 mA VJ gate emitter leakage current I V = 20 V 500 nA GES GE total gate charge Q V = 600 V V = 15 V I = 50 A 165 nC G(on) CE GE C t turn-on delay time 70 ns d(on) t current rise time 40 ns r inductive load T = 125C VJ turn-off delay time t 250 ns d(off) V = 600 V I = 50 A CE C current fall time t 100 ns f V = 15 V R = 15 W GE G turn-on energy per pulse E 4.5 mJ on E turn-off energy per pulse 5.5 mJ off RBSOA reverse bias safe operating area V = 15 V R = 15 W T = 125C GE G VJ V = 1200 V 150 A CEK short circuit safe operating area SCSOA short circuit duration t V = 900 V V = 15 V T = 125C 10 s SC CE GE VJ short circuit current I R = 15 W non-repetitive 200 A SC G thermal resistance junction to case R (per IGBT) 0.43 K/W thJC Output Inverter D1 - D6 Ratings Symbol Definitions Conditions min. typ. max. Unit max. repetitve reverse voltage V T = 25C 1200 V RRM VJ forward current I T = 25C 85 A F25 C I T = 80C 57 A F80 C forward voltage V I = 60 A V = 0 V T = 25C 1.95 2.2 V F F GE VJ T = 125C 1.95 V VJ reverse recovery charge Q 8 C rr V = 600 V R max. reverse recovery current I 60 A RM di /dt = -1200 A/s T = 125C F VJ t reverse recovery time 350 ns rr I = 60 A V = 0 V F GE reverse recovery energy E 2.5 mJ rec thermal resistance junction to case R (per diode) 0.6 K/W thJC T = 25C unless otherwise stated C IXYS reserves the right to change limits, test conditions and dimensions. 20110509a 2011 IXYS All rights reserved 2 - 6