MIXA61WB1200TEH IXYS

MIXA450PF1200TSF V= 2x 1200V CES XPT IGBT Module I= 650A C25 VV= 1.8 CE(sat) Phase leg + free wheeling Diodes + NTC Part number MIXA450PF1200TSF Backside: isolated 5 2 1 8 7 9 4 3 10/11 6 Features / Advantages: Applications: Package: SimBus F High level of integration - only one AC motor drives Isolation Voltage: V~ 3000 power semiconductor module required Pumps, Fans Industry standard outline for the whole drive Air-conditioning system RoHS compliant Rugged XPT design (Xtreme light Punch Through) Inverter and power supplies Soldering pins for PCB mounting results in: UPS Height: 17 mm - short circuit rated for 10 sec. Base plate: Copper - very low gate charge internally DCB isolated - low EMI Advanced power cycling - square RBSOA 3x Ic Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) Temperature sense included SONIC diode - fast and soft reverse recovery - low operating forward voltage IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20121026a 2012 IXYS all rights reservedMIXA450PF1200TSF Ratings IGBT Symbol Definition Conditions min. typ. max. Unit collector emitter voltage V T = 25C 1200 V VJ CES max. DC gate voltage V 20 V GES max. transient gate emitter voltage V 30 V GEM collector current I T = 25C 650 A C25 C I T = 80 C 450 A C C80 total power dissipation P T = 25C 2100 W tot C collector emitter saturation voltage V I = A V = 15 V450 T = 25C 1.8 2.15 V CE(sat) CGE VJ T = 125 C 2.15 V VJ gate emitter threshold voltage V I = 18 mA V = V T = 25C 5.4 5.9 6.5 V VJ GE(th) CGECE collector emitter leakage current I V = V V = 0 V T = 25C 1 mA CES CE CES GE VJ T = 125 C 6 mA VJ gate emitter leakage current I V = 20 V 1.5 A GES GE total gate charge Q V = 60 0 V V = 15 V I = 45 0 A 1400 nC G(on) CE GE C turn-on delay time t 85 ns d(on) current rise time t 80 ns r inductive load T = 125 C VJ turn-off delay time t 310 ns d(off) V = 600 V I = 450 A CE C current fall time t 360 ns f V = 15 V R = 1. 6 GE G turn-on energy per pulse E 22 mJ on turn-off energy per pulse E 68 mJ off reverse bias safe operating area RBSOA V = 15 V R = 1. 6 T = 125 C GE G VJ A I V = 1200 V 900 CM CEmax short circuit safe operating area SCSOA V = 12 00 V CEmax short circuit duration t SC V = 900 V V = 15 V T = 125 C 10 s CE GE VJ short circuit current I R = 1.6 non-repetitive 1900 A SC G thermal resistance junction to case R 0.06 K/W thJC thermal resistance case to heatsink K/W R 0.03 thCH Diode max. repetitive reverse voltage V T = 25C 1200 V VJ RRM forward current A I T = 25C 380 F25 C I T = 80 C 265 A F 80 C forward voltage V I = 450 A T = 25C 2.30 V F F VJ T = 125C 2.00 V VJ reverse current V = V mA I T = 25C * R R RRM VJ * not applicable, see Ices value above T = 125C * mA VJ reverse recovery charge Q 62 C rr V = 600 V R max. reverse recovery current I 425 A RM -di /dt = 54 00 A/s T = 125C F VJ reverse recovery time t 360 ns rr I = 450 A V = 0 V FGE reverse recovery energy E 26 mJ rec thermal resistance junction to case R 0.095 K/W thJC thermal resistance case to heatsink R 0.04 K/W thCH IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20121026a 2012 IXYS all rights reserved