MIXA80WB1200TEH IXYS

MIXA80WB1200TEH Three Phase Brake Three Phase Converter - Brake - Inverter Rectifier Chopper Inverter Module V = 1600 V V = 1200 V V = 1200 V RRM CES CES I = 265 A I = 60 A I = 120 A DAVM C25 C25 XPT IGBT I = 1100 A V = 1.8 V V = 1.8 V FSM CE(sat) CE(sat) Part name (Mar king on product) MIXA80WB1200TEH E72873 Pin configuration see outlines. 21 22 D7 D1 D5 D11 D13 D15 D3 18 16 20 T1 T3 T5 NTC 8 7 15 17 19 1 2 3 4 6 5 D6 D2 D4 D12 D14 D16 11 12 13 14 T7 T2 T4 T6 9 10 23 24 Features: Application: Package: Easy paralleling due to the positive AC motor dr ives E3-Pac standard outline temperature coefficient of the on-state Solar inver ter Insulated copper base plate voltage Medical equipment Solder ing pins for PCB mounting Rugged XPT design Uninterr uptible power supply Temperature sense included (Xtreme light Punch Through) results in: Air-conditioning systems - shor t circuit rated for 10 sec. Welding equipment - ver y low gate charge Switched-mode and - square RBSOA 3x I resonant-mode power supplies C - low EMI Thin wafer technology combined with the XPT design results in a competitive low V CE(sat) SONIC diode - fast and soft reverse recover y - low operating forward voltage Terms & Conditions of usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component character istics. The infor mation in the valid application- and assembly notes must be consi- dered. Should you require product infor mation in excess of the data given in this product data sheet or which concer ns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For infor mation on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endanger ing or life suppor t applications, please notify. For any such application we urgently recommend - to perfor m joint r isk and quality assessments - the conclusion of quality agreements - to establish joint measures of an ongoing product sur vey, and that we may make deliver y dependent on the realization of any such measures. IXYS reserves the right to change limits, test conditions and dimensions. 20160518e 2016 IXYS All rights reserved 1 - 9MIXA80WB1200TEH Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions min. typ. max. Unit collector emitter voltage V T = 25C 1200 V CES VJ max. DC gate voltage V continuous 20 V GES V max. transient collector gate voltage transient 30 V GEM I collector current T = 25C 120 A C25 C I T = 80C 84 A C80 C total power dissipation P T = 25C 390 W tot C collector emitter saturation voltage V I = 77 A V = 15 V T = 25C 1.8 2.1 V CE(sat) C GE VJ T = 125C 2.1 V VJ gate emitter threshold voltage V I = 3 mA V = V T = 25C 5.4 6.0 6.5 V GE(th) C GE CE VJ collector emitter leakage current I V = V V = 0 V T = 25C 0.03 0.2 mA CES CE CES GE VJ T = 125C 0.6 mA VJ gate emitter leakage current I V = 20 V 500 nA GES GE total gate charge Q V = 600 V V = 15 V I = 75 A 230 nC G(on) CE GE C turn-on delay time t 70 ns d(on) t current rise time 40 ns r inductive load T = 125C VJ t turn-off delay time 250 ns d(off) V = 600 V I = 75 A CE C current fall time t 100 ns f V = 15 V R = 10 W GE G turn-on energy per pulse E 6.8 mJ on turn-off energy per pulse E 8.3 mJ off reverse bias safe operating area RBSOA V = 15 V R = 10 W T = 125C GE G VJ V = 1200 V 225 A CEK SCSOA short circuit safe operating area short circuit duration t V = 900 V V = 15 V T = 125C 10 s SC CE GE VJ short circuit current I R = 10 W non-repetitive 300 A SC G thermal resistance junction to case R (per IGBT) 0.32 K/W thJC Output Inverter D1 - D6 Ratings Symbol Definitions Conditions min. typ. max. Unit max. repetitve reverse voltage V T = 25C 1200 V RRM VJ forward current I T = 25C 135 A F25 C I T = 80C 90 A F80 C V forward voltage I = 100 A V = 0 V T = 25C 1.95 2.2 V F F GE VJ T = 125C 1.95 V VJ reverse recovery charge Q 12.5 C rr V = 600 V R max. reverse recovery current I 100 A RM di /dt = -1600 A/s T = 125C F VJ reverse recovery time t 350 ns rr I = 100 A V = 0 V F GE E reverse recovery energy 4 mJ rec R thermal resistance junction to case (per diode) 0.4 K/W thJC T = 25C unless otherwise stated C IXYS reserves the right to change limits, test conditions and dimensions. 20160518e 2016 IXYS All rights reserved 2 - 9