MIXA81H1200EH IXYS

MIXA81H1200EH IGBT Module V = 1200 V CES I = 120 A C25 H Bridge V = 1.8 V CE(sat) Part name (Marking on product) MIXA81H1200EH 13, 21 1 9 2 10 19 E72873 15 3 11 4 12 14, 20 Features: Application: Package: Easy paralleling due to the positive AC motor drives E3-Pac standard outline temperature coefficient of the on-state Solar inverter Insulated copper base plate voltage Medical equipment Soldering pins for PCB mounting Rugged XPT design Uninterruptible power supply Optimizes pin layout (Xtreme light Punch Through) results in: Air-conditioning systems - short circuit rated for 10 sec. Welding equipment - very low gate charge Switched-mode and - square RBSOA 3x I resonant-mode power supplies C - low EMI Thin wafer technology combined with the XPT design results in a competitive low V CE(sat) SONIC diode - fast and soft reverse recovery - low operating forward voltage IXYS reserves the right to change limits, test conditions and dimensions. 20110518a 2011 IXYS All rights reserved 1 - 6MIXA81H1200EH Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions min. typ. max. Unit collector emitter voltage V T = 25C 1200 V CES VJ max. DC gate voltage V continuous 20 V GES V max. transient collector gate voltage transient 30 V GEM I collector current T = 25C 120 A C25 C I T = 80C 84 A C80 C total power dissipation P T = 25C 390 W tot C collector emitter saturation voltage V I = 77 A V = 15 V T = 25C 1.8 2.1 V CE(sat) C GE VJ T = 125C 2.1 V VJ gate emitter threshold voltage V I = 3 mA V = V T = 25C 5.4 6.0 6.5 V GE(th) C GE CE VJ collector emitter leakage current I V = V V = 0 V T = 25C 0.03 0.2 mA CES CE CES GE VJ T = 125C 0.6 mA VJ gate emitter leakage current I V = 20 V 500 nA GES GE total gate charge Q V = 600 V V = 15 V I = 75 A 230 nC G(on) CE GE C t turn-on delay time 70 ns d(on) t current rise time 40 ns r inductive load T = 125C VJ turn-off delay time t 250 ns d(off) V = 600 V I = 75 A CE C current fall time t 100 ns f V = 15 V R = 10 W GE G turn-on energy per pulse E 6.8 mJ on E turn-off energy per pulse 8.3 mJ off RBSOA reverse bias safe operating area V = 15 V R = 10 W T = 125C GE G VJ V = 1200 V 225 A CEK short circuit safe operating area SCSOA short circuit duration t V = 900 V V = 15 V T = 125C 10 s SC CE GE VJ short circuit current I R = 10 W non-repetitive 300 A SC G thermal resistance junction to case R (per IGBT) 0.32 K/W thJC Output Inverter D1 - D6 Ratings Symbol Definitions Conditions min. typ. max. Unit max. repetitve reverse voltage V T = 25C 1200 V RRM VJ forward current I T = 25C 135 A F25 C I T = 80C 90 A F80 C forward voltage V I = 100 A V = 0 V T = 25C 1.95 2.2 V F F GE VJ T = 125C 1.95 V VJ reverse recovery charge Q 12.5 C rr V = 600 V R max. reverse recovery current I 100 A RM di /dt = -1600 A/s T = 125C F VJ t reverse recovery time 350 ns rr I = 100 A V = 0 V F GE reverse recovery energy E 4 mJ rec thermal resistance junction to case R (per diode) 0.4 K/W thJC T = 25C unless otherwise stated C IXYS reserves the right to change limits, test conditions and dimensions. 20110518a 2011 IXYS All rights reserved 2 - 6