MIXA81WB1200TEH IXYS

MIXA81WB1200TEH tentative 3~ Brake 3~ XPT IGBT Module Rectifier Chopper Inverter V = 1600 V V = 1200 V V =V1200 RRM CES CES I290 AI90 AI1=20 A = = C25 DAV C25 V 1.8 I = 1200 A V = 1.8 V = V FSM CE(sat) CE(sat) 6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC Part number MIXA81WB1200TEH Backside: isolated 30/31/32 26/27 17 7 10 13 1/2 3/4 5/6 28/29 8/9 11/12 14/15 22 23 20 18 16 19 33/34/35 24/25 21 Features / Advantages: Applications: Package: E3-Pack Easy paralleling due to the positive temperature AC motor drives Isolation Voltage: V~ 3600 coefficient of the on-state voltage Solar inverter Industry standard outline Rugged XPT design (Xtreme light Punch Through) Medical equipment RoHS compliant results in: Uninterruptible power supply Soldering pins for PCB mounting - short circuit rated for 10 sec. Air-conditioning systems Height: 17 mm - very low gate charge Welding equipment Base plate: Copper - low EMI Switched-mode and resonant-mode internally DCB isolated - square RBSOA 3x Ic power supplies Advanced power cycling Thin wafer technology combined with the XPT design Inductive heating, cookers results in a competitive low VCE(sat) Pumps, Fans SONIC diode - fast and soft reverse recovery - low operating forward voltage IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20120719 2012 IXYS all rights reservedMIXA81WB1200TEH tentative Ratings Rectifier Conditions Symbol Definition min. typ. max. Unit V T = 25C 1700 V max. non-repetitive reverse blocking voltage RSM VJ V T = 25C 1600 V max. repetitive reverse blocking voltage RRM VJ reverse current, drain current I V = V1600 T = 25C 100 A R R VJ V = V1600 T = C125 0.5 mA R VJ forward voltage drop V I = A120 T = 25C 1.23 V F F VJ V I = A240 F I = A120 T = C125 1.19 V F VJ I = A240 V F bridge output current T = C80 T = C150 290 A I DAV C VJ rectangular d = V threshold voltage T = C150 0.85 V F0 VJ for power loss calculation only slope resistance r 2.7 m F thermal resistance junction to case R 0.45 K/W thJC thermal resistance case to heatsink R K/W thCH 0.10 P total power dissipation T = 25C 280 W tot C max. forward surge current I t = 10 ms (50 Hz), sine T = 45C 1.20 kA FSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 1.30 kA R t = 10 ms (50 Hz), sine T = C150 1.02 kA VJ t = 8,3 ms (60 Hz), sine V = 0 V 1.10 kA R value for fusing It t = 10 ms (50 Hz), sine T = 45C 7.20 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 6.98 kAs R t = 10 ms (50 Hz), sine T = C150 5.20 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 5.04 kAs R junction capacitance C V = V600 f = 1 MHz T = 25C 26 pF J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20120719 2012 IXYS all rights reserved