MIXG330PF1200TSF IXYS

Corporation The IXYS Corporation MIXG330PF1200TSF IGBT Module is a device with three IGBT chips and one diode chip that can deliver high power and high speed switching performance. It offers an output voltage rating of 1200V, enabling it to handle high power applications. Its power losses are much lower than that of a diode bridge, making it an ideal choice for applications including motor drives, UPS systems, and H-bridge circuits. It offers a maximum collector current of 330A, allowing it to switch higher currents when necessary. It has an integrated circuit architecture that can provide high thermal performance with a low drive current, enabling better energy efficiency. The improved thermal management of the IGBT Module enables it to operate reliably even at higher temperatures. The built-in EMI protection prevents electrical interference with the device and its surrounding components. This makes it suitable for use in a wide range of environments.