Advanced Technical Information MKI 100-12F8 I = 125 A IGBT Modules C25 V = 1200 V CES H Bridge V = 3.3 V CE(sat) typ. Short Circuit SOA Capability Square RBSOA 13, 21 1 9 2 10 19 15 11 3 4 12 14, 20 MKI Features IGBTs Fast NPT IGBTs Symbol Conditions Maximum Ratings - low saturation voltage - positive temperature coefficient for V T = 25C to 150C 1200 V CES VJ easy paralleling - fast switching V 20 V GES - short tail current for optimized I T = 25C 125 A C25 C performance also in resonant circuits TM I T = 80C 85 A HiPerFRED diode: C80 C - fast reverse recovery I V = 15 V R = 5.6 T = 125C 200 A CM GE VJ G - low operating forward voltage V RBSOA clamped inductive load L = 100 H V CEK CES - low leakage current Industry Standard Package t V = 900 V V = 15 V R = 5.6 T = 125C 10 s GE VJ SC CE G - solderable pins for PCB mounting SCSOA non-repetitive - isolated copper base plate P T = 25C 640 W tot C Typical Applications Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) VJ - motor control min. typ. max DC motor amature winding V I = 100 A V = 15 V T = 25C 3.3 3.9 V . DC motor excitation winding VJ CE(sat) C GE . synchronous motor excitation winding T = 125C 4.0 V VJ - supply of transformer primary winding V I = 4 mA V = V 4.5 6.5 V GE(th) C GE CE . power supplies . welding I V = V V = 0 V T = 25C 1.3 mA VJ CES CE CES GE . X-ray T = 125C 4.0 mA VJ . battery charger I V = 0 V V = 20 V 600 nA GES CE GE t 130 ns d(on) t 60 ns r Inductive load, T = 125C VJ t 365 ns d(off) V = 600 V I = 100 A CE C t 30 ns f V = 15 V R = 5.6 GE G E 12.0 mJ on E 5.0 mJ off C V = 25 V V = 0 V f = 1 MHz 6.5 nF ies CE GE Q V = 600 V V = 15 V I = 100 A 1.1 C Gon CE GE C R (per IGBT) 0.19 K/W thJC IXYS reserves the right to change limits, test conditions and dimensions. 2004 IXYS All rights reserved 1 - 2 451Advanced Technical Information MKI 100-12F8 Diodes Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings Conduction I T = 25C 200 A F25 C I T = 80C 130 A F80 C Symbol Conditions Characteristic Values min. typ. max. IGBT (typ. at V = 15 V T = 125C) V I = 100 A V = 0 V T = 25C 2.3 2.6 V GE J VJ F F GE V = 2.05 V R = 19.5 m T = 125C 1.7 V 0 0 VJ Free Wheeling Diode (typ. at T = 125C) I I = 120 A di /dt = -750 A/s T = 125C 82 A VJ J RM F F V = 1.27 V R = 4.3 m t V = 600 V V = 0 V 200 ns 0 0 rr R GE R (per diode) 0.3 K/W Thermal Response thJC Module Symbol Conditions Maximum Ratings T operating -40...+125 C VJ T +150 C JM T -40...+125 C stg IGBT (typ.) C = 0.409 J/K R = 0.14 K/W th1 th1 V I 1 mA 50/60 Hz 2500 V~ ISOL ISOL C = 2.203 J/K R = 0.05 K/W th2 th2 M Mounting torque (M5) 3 - 6 Nm d Free Wheeling Diode (typ.) C = 0.301 J/K R = 0.24 K/W th1 th1 C = 2.005 J/K R = 0.062 K/W th2 th2 Symbol Conditions Characteristic Values min. typ. max. R 1.8 m pin-chip d Creepage distance on surface 10 mm S d Strike distance in air 10 mm A R with heatsink compound 0.01 K/W thCH Weight 300 g Dimensions in mm (1 mm = 0.0394 ) pins 5, 6, 7, 8 and 17 for MWI only 2004 IXYS All rights reserved 2 - 2 451