MKI50-12F7 IXYS

Advanced Technical Information MKI 50-12F7 I = 65 A IGBT Modules C25 V = 1200 V CES H Bridge V = 3.2 V CE(sat) typ. Short Circuit SOA Capability Square RBSOA 13 9 1 2 10 16 14 11 3 12 4 17 MKI Features IGBTs Fast NPT IGBTs Symbol Conditions Maximum Ratings - low saturation voltage - positive temperature coefficient for V T = 25C to 150C 1200 V CES VJ easy paralleling - fast switching V 20 V GES - short tail current for optimized I T = 25C 65 A C25 C performance also in resonant circuits TM I T = 80C 45 A HiPerFRED diode: C80 C - fast reverse recovery I V = 15 V R = 13 T = 125C 100 A CM GE VJ G - low operating forward voltage V RBSOA clamped inductive load L = 100 H V CEK CES - low leakage current Industry Standard Package t V = 900 V V = 15 V R = 13 T = 125C 10 s GE VJ SC CE G - solderable pins for PCB mounting SCSOA non-repetitive - isolated copper base plate P T = 25C 350 W tot C - UL registered, E 72873 Typical Applications Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) VJ - motor control min. typ. max DC motor amature winding V I = 50 A V = 15 V T = 25C 3.2 3.8 V . DC motor excitation winding VJ CE(sat) C GE . synchronous motor excitation winding T = 125C 3.8 V VJ - supply of transformer primary winding V I = 2 mA V = V 4.5 6.5 V GE(th) C GE CE . power supplies . welding I V = V V = 0 V T = 25C 0.7 mA VJ CES CE CES GE . X-ray T = 125C 2.5 mA VJ . battery charger I V = 0 V V = 20 V 500 nA GES CE GE t 130 ns d(on) t 60 ns r Inductive load, T = 125C VJ t 360 ns d(off) V = 600 V I = 50 A CE C t 30 ns f V = 15 V R = 13 GE G E 6.0 mJ on E 2.5 mJ off C V = 25 V V = 0 V f = 1 MHz 3.3 nF ies CE GE Q V = 600 V V = 15 V I = 50 A 600 nC Gon CE GE C R (per IGBT) 0.35 K/W thJC IXYS reserves the right to change limits, test conditions and dimensions. 2004 IXYS All rights reserved 1 - 2 414Advanced Technical Information MKI 50-12F7 Diodes Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings Conduction I T = 25C 110 A F25 C I T = 80C 70 A F80 C Symbol Conditions Characteristic Values min. typ. max. IGBT (typ. at V = 15 V T = 125C) V I = 50 A V = 0 V T = 25C 2.2 2.6 V GE J VJ F F GE V = 2.05 V R = 35 m T = 125C 1.6 V 0 0 VJ Free Wheeling Diode (typ. at T = 125C) I I = 50 A di /dt = -500 A/s T = 125C 40 A VJ J RM F F V = 1.3 V R = 6 m t V = 600 V V = 0 V 200 ns 0 0 rr R GE R (per diode) 0.61 K/W Thermal Response thJC Module Symbol Conditions Maximum Ratings T operating -40...+125 C VJ T -40...+150 C VJM T -40...+125 C stg IGBT (typ.) C = 0.22 J/K R = 0.26 K/W th1 th1 V I 1 mA 50/60 Hz 2500 V~ ISOL ISOL C = 1.74 J/K R = 0.09 K/W th2 th2 M Mounting torque (M5) 2.7 - 3.3 Nm d Free Wheeling Diode (typ.) C = 0.151 J/K R = 0.483 K/W th1 th1 C = 1.003 J/K R = 0.127 K/W th2 th2 Symbol Conditions Characteristic Values min. typ. max. R 5m pin-chip Dimensions in mm (1 mm = 0.0394 ) d Creepage distance on surface 6 mm S d Strike distance in air 6 mm A R with heatsink compound 0.02 K/W thCH Weight 180 g pins 5, 6, 7, 8 and 15 for MWI only 2004 IXYS All rights reserved 2 - 2 414