MKI75-06A7 IXYS

MKI 75-06 A7 MKI 75-06 A7T I = 90 A IGBT Modules C25 V = 600 V CES H-Bridge V = 2.1 V CE(sat) typ. Short Circuit SOA Capability Square RBSOA 13 Type: NTC - Option: T1 T5 D1 D5 9 1 MKI 75-06 A7 without NTC T 2 10 MKI 75-06 A7T with NTC 16 14 T6 T2 D2 D6 T B3 3 11 4 12 17 Features IGBTs NPT IGBT technology Symbol Conditions Maximum Ratings low saturation voltage low switching losses V T = 25C to 150C 600 V CES VJ switching frequency up to 30 kHz square RBSOA, no latch up V 20 V GES high short circuit capability I T = 25C 90 A C25 C positive temperature coefficient for I T = 80C 60 A easy parallelling C80 C MOS input, voltage controlled RBSOA V = 15 V R = 18 T = 125C I = 120 A GE VJ CM G ultra fast free wheeling diodes Clamped inductive load L = 100 H V V CEK CES solderable pins for PCB mounting package with copper base plate t V = V V = 15 V R = 18 T = 125C 10 s GE VJ SC CE CES G UL registered, E 72873 (SCSOA) non-repetitive P T = 25C 280 W tot C Advantages space savings reduced protection circuits Symbol Conditions Characteristic Values package designed for wave soldering (T = 25C, unless otherwise specified) VJ min. typ. max. Typical Applications V I = 75 A V = 15 V T = 25C 2.1 2.6 V VJ CE(sat) C GE motor control T = 125C 2.5 V VJ - DC motor armature winding - DC motor excitation winding V I = 1.5 mA V = V 4.5 6.5 V GE(th) C GE CE - synchronous motor excitation winding I V = V V = 0 V T = 25C 1.3 mA VJ supply of transformer primary winding CES CE CES GE T = 125C 0.9 mA - power supplies VJ - welding I V = 0 V V = 20 V 200 nA GES CE GE - X-ray - UPS t 50 ns d(on) - battery charger t 50 ns r Inductive load, T = 125C VJ t 270 ns d(off) V = 300 V I = 75 A CE C t 40 ns f V = 15 V R = 18 GE G E 3.5 mJ on E 2.5 mJ off C V = 25 V V = 0 V f = 1 MHz 3200 pF ies CE GE Q V = 300V V = 15 V I = 75 A 190 nC Gon CE GE C R (per IGBT) 0.44 K/W thJC IXYS reserves the right to change limits, test conditions and dimensions.IXYS reserves the right to change limits, test conditions and dimensions. 2005 IXYS All rights reserved 1 - 4 PHASE-OUT 0529MKI 75-06 A7 MKI 75-06 A7T Diodes Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings Conduction I T = 25C 140 A F25 C I T = 80C 85 A F80 C Symbol Conditions Characteristic Values min. typ. max. IGBT (typ. at V = 15 V T = 125C) V I = 75 A V = 0 V T = 25C 1.8 2.1 V GE J VJ F F GE V = 0.95 V R = 20 m T = 125C 1.3 V 0 0 VJ Free Wheeling Diode (typ. at T = 125C) I I = 60 A di /dt = -500 A/s T = 125C 28 A VJ J RM F F V = 1.014 V R = 4 m t V = 300 V V = 0 V 100 ns 0 0 rr R GE B3 R (per diode) 0.61 K/W Thermal Response thJC Module Symbol Conditions Maximum Ratings T -40...+150 C VJ T -40...+125 C stg V I 1 mA 50/60 Hz 2500 V~ ISOL ISOL IGBT (typ.) C = 0.248 J/K R = 0.343 K/W th1 th1 M Mounting torque (M5) 2.7 - 3.3 Nm d C = 1.849 J/K R = 0.097 K/W th2 th2 Free Wheeling Diode (typ.) Symbol Conditions Characteristic Values C = 0.23 J/K R = 0.483 K/W th1 th1 min. typ. max. C = 1.3 J/K R = 0.127 K/W th2 th2 R 5m pin-chip d Creepage distance on surface 6 mm S d Strike distance in air 6 mm A R with heatsink compound 0.02 K/W thCH Weight 180 g Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R T = 25C 4.75 5.0 5.25 k 25 B 3375 K 25/50 Dimensions in mm (1 mm = 0.0394 ) 2005 IXYS All rights reserved 2 - 4 PHASE-OUT 0529