Preliminary Technical Information TM TM GigaMOS Trench V = 250V MMIX1F180N25T DSS TM HiperFET I = 132A D25 Power MOSFET R 13m DS(on) t 200ns rr (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab V T = 25 C to 150 C 250 V DSS J V T = 25 C to 150 C, R = 1M 250 V D DGR J GS V Continuous 20 V GSS V Transient 30 V GSM I T = 25 C 132 A S D25 C I T = 25 C, Pulse Width Limited by T 500 A DM C JM G I T = 25 C90A A C G = Gate D = Drain E T = 25 C5J AS C S = Source P T = 25 C 570 W D C dv/dt I I , V V , T 150 C 20 V/ns S DM DD DSS J Features T -55 ... +150 C J T 150 C JM Silicon Chip on Direct-Copper Bond T -55 ... +150 C stg (DCB) Substrate Isolated Substrate T Maximum Lead Temperature for Soldering 300 C L - Excellent Thermal Transfer T Plastic Body for 10s 260 C SOLD - Increased Temperature and Power V 50/60 Hz, 1 Minute 2500 V~ ISOL Cycling Capability - High Isolation Voltage (2500V~) F Mounting Force 50..200 / 11..45 N/lb C Very High Current Handling Weight 8 g Capability Fast Intrinsic Diode Avalanche Rated Very Low R DS(on) Advantages Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Easy to Mount BV V = 0V, I = 3mA 250 V Space Savings DSS GS D High Power Density V V = V , I = 8mA 3.0 5.0 V GS(th) DS GS D I V = 20V, V = 0V 200 nA Applications GSS GS DS I V = V , V = 0V 50 A DSS DS DSS GS DC-DC Converters and Off-Line UPS Note 2, T = 125C 2.5 mA J Primary-Side Switch High Speed Power Switching R V = 10V, I = 90A, Note 1 13 m DS(on) GS D Applications 2014 IXYS CORPORATION, All Rights Reserved DS100438A(9/14)MMIX1F180N25T Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 90 150 S fs DS D C 23.8 nF iss C V = 0V, V = 25V, f = 1MHz 2070 pF oss GS DS C 47 pF rss R Gate Input Resistance 1.1 GI t 35 ns d(on) Resistive Switching Times t 52 ns r V = 15V, V = 0.5 V , I = 90A GS DS DSS D t 88 ns d(off) R = 1 (External) G t 20 ns f Q 364 nC g(on) Q V = 10V, V = 0.5 V , I = 90A 137 nC gs GS DS DSS D Q 60 nC gd R 0.22 C/W thJC R 0.05 C/W thCS R 30 C/W thJA Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 180 A S GS I Repetitive, Pulse Width Limited by T 720 A SM JM V I = 60A, V = 0V, Note 1 1.3 V SD F GS t 200 ns rr I = 90A, V = 0V F GS I 11 A RM -di/dt = 100A/ s Q 0.77 C RM V = 75V R Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Part must be heatsunk for high-temp I measurement. DSS PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537