Preliminary Technical Information TM 1200V XPT IGBT V = 1200V MMIX1Y100N120C3H1 CES TM GenX3 w/ Diode I = 40A C110 V 3.5V CE(sat) t = 110ns fi(typ) High-Speed IGBT for 20-50 kHz Switching C G Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1200 V E CES J V T = 25C to 150C, R = 1M 1200 V CGR J GE V Continuous 20 V GES Isolated Tab V Transient 30 V GEM C I T = 25C (Chip Capability) 92 A C25 C I T = 110C 40 A C110 C I T = 110C 34 A F110 C I T = 25C, 1ms 440 A E CM C I T = 25C 50 A A C G E T = 25C 1.2 J AS C SSOA V = 15V, T = 125C, R = 1 I = 200 A G = Gate E = Emitter GE VJ G CM C = Collector (RBSOA) Clamped Inductive Load V V CE CES P T = 25C 400 W Features C C T -55 ... +150 C J z Optimized for Low Switching Losses T 150 C z JM Silicon Chip on Direct-Copper Bond T -55 ... +150 C (DCB) Substrate stg z Isolated Mounting Surface T Maximum Lead Temperature for Soldering 300 C L z 2500V~ Electrical Isolation T 1.6 mm (0.062 in.) from Case for 10 260 C SOLD z Square RBSOA V 50/60Hz, 1 minute 2500 V~ z ISOL Isolation Voltage 2500V~ z Anti-Parallel Ultra Fast Diode F Mounting Force 50..200/11..45 N/lb. C z Positive Thermal Coefficient of Weight 8 g Vce(sat) z Avalanche Rated z High Current Handling Capability z International Standard Package Symbol Test Conditions Characteristic Values Advantages (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J BV I = 250A, V = 0V 1200 V z CES C GE High Power Density z Low Gate Drive Requirement V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE I V = V , V = 0V 50 A Applications CES CE CES GE Note 2, T = 125C 3 mA J z High Frequency Power Inverters I V = 0V, V = 20V 100 nA z GES CE GE UPS z Motor Drives V I = 100A, V = 15V, Note 1 2.9 3.5 V CE(sat) C GE z SMPS T = 125C 3.9 V J z PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballasts 2013 IXYS CORPORATION, All Rights Reserved DS100480A(03/13)MMIX1Y100N120C3H1 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 30 52 S fs C CE C 6000 pF ies C V = 25V, V = 0V, f = 1MHz 353 pF oes CE GE C 130 pF res Q 270 nC g(on) Q I = 100A, V = 15V, V = 0.5 V 50 nC ge C GE CE CES Q 93 nC gc t 32 ns d(on) t 90 ns Inductive load, T = 25C ri J E 6.50 mJ I = 100A, V = 15V on C GE t 123 ns V = 0.5 V , R = 1 d(off) CE CES G t 110 ns fi Note 3 E 2.90 5.00 mJ f of t 32 ns d(on) Inductive load, T = 125C t 90 ns J ri I = 100A, V = 15V E 10.10 mJ C GE on V = 0.5 V , R = 1 t 140 ns CE CES G d(off) t 125 ns Note 3 fi E 3.55 mJ off R 0.31 C/W thJC R 0.05 C/W thCS R 30 C/W thJA Reverse Diode (Sonic-FRD) Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J V I = 60A, V = 0V, Note 1 2.7 V F F GE T = 125C 1.9 V J I 41 A RM I = 60A, V = 0V, T = 125C F GE J -di /dt = 700A/s, V = 600V t 420 ns F R rr R 0.54 C/W thJC Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. Part must be heatsunk for high-temp I measurement. CES 3. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537