Preliminary Technical Information High Voltage IGBT V = 2500V MMIX4G20N250 CES For Capacitor Discharge I = 23A C25 Applications V 3.1V CE(sat) C1 C2 Q1 Q2 ( Electrically Isolated Tab) G2 G1 E2C4 E1C3 Q3 Q4 C2 H-Bridge Configuration G2 G4 E2C4 G3 E3E4 G4 E3E4 C1 G1 E1C3 Symbol Test Conditions Maximum Ratings G3 V T = 25C to 150C 2500 V CES J V T = 25C to 150C, R = 1M 2500 V CGR J GE Isolated Tab E3E4 G4 V Continuous 20 V GES E2C4 G2 V Transient 30 V GEM C2 G3 I T = 25C 23 A C25 C I T = 90C 14 A E1C3 C90 C G1 I T = 25C, V = 19V, 1ms 105 A CM C GE C1 10ms 55 A SSOA V = 15V, T = 125C, R = 20 I = 60 A G = Gate E = Emitter GE VJ G CM C = Collector (RBSOA) Clamped Inductive Load 1500 V P T = 25C 100 W C C T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg Silicon Chip on Direct-Copper Bond T 1.6 mm (0.062 in.) from Case for 10s 300 C L (DCB) Substrate T Plastic Body for 10s 260 C SOLD Isolated Mounting Surface F Mounting Force 50..200 / 11..45 Nm/lb.in. C 4000V~ Electrical Isolation High Peak Current Capability V 50/60Hz, 1 Minute 4000 V~ ISOL Low Saturation Voltage Weight 8g Molding Epoxies Meet UL 94 V-0 Flammability Classification Symbol Test Conditions Characteristic Values Applications (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV I = 250 A, V = 0V 2500 V CES C GE Capacitor Discharge Pulser Circuits V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE I V = 0.8 V , V = 0V 10 A CES CE CES GE Note 2, T = 125C 750 A J Advantages I V = 0V, V = 20V 100 nA GES CE GE High Power Density V I = 20A, V = 15V, Note 1 3.1 V CE(sat) C GE Easy to Mount 2012 IXYS CORPORATION, All Rights Reserved DS100278B(06/12)MMIX4G20N250 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g I = 20A, V = 10V, Note 1 8 13 S fs C CE I V = 20V, V = 15V, Note 1 190 A C(ON) GE CE C 1190 pF ies C V = 15V, V = 20V, f = 1MHz 53 pF oes CE GE C 18 pF res Q 53 nC g Q I = 20A, V = 15V, V = 1000V 8 nC ge C GE CE Q 22 nC gc t 57 ns d(on) Resistive Switching Times t 160 ns r I = 40A, V = 15V C GE t 136 ns d(off) V = 1250V, R = 10 CE G t 930 ns f R 1.25 C/W thJC R 0.05 C/W thCS R 30 C/W thJA Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537