MWI 100-12 A8 I = 160 A IGBT Modules C25 V = 1200 V CES Sixpack V = 2.2 V CE(sat) typ. Short Circuit SOA Capability Square RBSOA 13, 21 1 5 9 2 6 10 19 17 15 E72873 3 7 11 See outline drawing for pin arrangement 4 8 12 14, 20 Features IGBTs NPT IGBT technology Symbol Conditions Maximum Ratings low saturation voltage low switching losses V T = 25C to 150C 1200 V CES VJ switching frequency up to 30 kHz square RBSOA, no latch up V 20 V GES high short circuit capability I T = 25C 160 A C25 C positive temperature coefficient for I T = 80C 110 A easy parallelling C80 C MOS input, voltage controlled RBSOA V = 15 V R = 6.8 T = 125C I = 200 A GE VJ CM G ultra fast free wheeling diodes Clamped inductive load L = 100 H V V CEK CES solderable pins for PCB mounting package with copper base plate t V = V V = 15 V R = 6.8 T = 125C 10 s GE VJ SC CE CES G (SCSOA) non-repetitive Advantages P T = 25C 640 W tot C space savings reduced protection circuits package designed for wave soldering Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) VJ Typical Applications min. typ. max. AC motor control V I = 100 A V = 15 V T = 25C 2.2 2.6 V VJ CE(sat) C GE AC servo and robot drives T = 125C 2.5 V VJ power supplies V I = 4 mA V = V 4.5 6.5 V GE(th) C GE CE I V = V V = 0 V T = 25C 6.3 mA VJ CES CE CES GE T = 125C 4 mA VJ I V = 0 V V = 20 V 400 nA GES CE GE t 100 ns d(on) t 60 ns r Inductive load, T = 125C VJ t 600 ns d(off) V = 600 V I = 100 A CE C t 90 ns f V = 15 V R = 6.8 GE G E 16.1 mJ on E 14.6 mJ off C V = 25 V V = 0 V f = 1 MHz 6.5 nF ies CE GE Q V = 600 V V = 15 V I = 100 A 475 nC Gon CE GE C R (per IGBT) 0.19 K/W thJC IXYS reserves the right to change limits, test conditions and dimensions.IXYS reserves the right to change limits, test conditions and dimensions.IXYS reserves the right to change limits, test conditions and dimensions. 20070912a 2007 IXYS All rights reserved 1 - 4MWI 100-12 A8 Diodes Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings Conduction I T = 25C 200 A F25 C I T = 80C 130 A F80 C Symbol Conditions Characteristic Values min. typ. max. IGBT (typ. at V = 15 V T = 125C) V I = 100 A V = 0 V T = 25C 2.3 2.6 V GE J VJ F F GE V = 1.3 V R = 12 m T = 125C 1.7 V 0 0 VJ Free Wheeling Diode (typ. at T = 125C) I I = 120 A di /dt = -750 A/s T = 125C 82 A VJ J RM F F V = 1.27 V R = 4.3 m t V = 600 V V = 0 V 200 ns 0 0 rr R GE R (per diode) 0.3 K/W Thermal Response thJC Module Symbol Conditions Maximum Ratings T operating -40...+125 C VJ T +150 C JM T -40...+125 C stg IGBT (typ.) C = 0.397 J/K R = 0.141 K/W th1 th1 V I 1 mA 50/60 Hz 2500 V~ ISOL ISOL C = 2.243 J/K R = 0.049 K/W th2 th2 M Mounting torque (M5) 3 - 6 Nm d Free Wheeling Diode (typ.) C = 0.301 J/K R = 0.238 K/W th1 th1 Symbol Conditions Characteristic Values C = 2.005 J/K R = 0.062 K/W th2 th2 min. typ. max. R 1.8 m pin-chip d Creepage distance on surface 10 mm S d Strike distance in air 10 mm A R with heatsink compound 0.01 K/W thCH Weight 300 g Dimensions in mm (1 mm = 0.0394 ) IXYS reserves the right to change limits, test conditions and dimensions. 20070912a 2007 IXYS All rights reserved 2 - 4