X-On Electronics has gained recognition as a prominent supplier of LBC857CDW1T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. LBC857CDW1T1G Bipolar Transistors - BJT are a product manufactured by Leshan. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

LBC857CDW1T1G Leshan

Name: LBC857CDW1T1G
Brand: Leshan
SKU: LBC857CDW1T1G_Leshan
Availability: InStock
Rating: 5 (11 reviews)

LBC857CDW1T1G electronic component of Leshan

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See Product Specifications

Part No.	LBC857CDW1T1G
Manufacturer:	Leshan
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) SOT-363 RoHS
Datasheet:	LBC857CDW1T1G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

20: USD 0.0474 ea
Line Total: USD 0.95

Availability - 19
Ship by Thu. 13 Mar to Tue. 18 Mar

MOQ: 20 Multiples: 20
Pack Size: 20

LBC857CDW1T1G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

19

Ship by Thu. 13 Mar to Tue. 18 Mar

MOQ : 20
Multiples : 20

20 : USD 0.0474
200 : USD 0.0369
600 : USD 0.0268
3000 : USD 0.0215
9000 : USD 0.019
21000 : USD 0.0178

Specifications

Manufacturer

Leshan Leshan

Product Category

Bipolar Transistors - BJT Bipolar Transistors - BJT

Brand

Leshan Leshan

Rohs

Y Y

Package

SOT - 363 SOT - 363

Transistor Type

2 PNP(Double) 2 PNP(Double)

Current - Collector Ic Max

100 mA 100 mA

Voltage - Collector Emitter Breakdown Max

45 V 45 V

Power - Max

380 mW 380 mW

Collector Cut-Off Current Icbo

15 nA 15 nA

Collector-Emitter Breakdown Voltage Vceo

45 V 45 V

Power Dissipation Pd

380 mW 380 mW

Collector Current Ic

100 mA 100 mA

Dc Current Gain Hfe@Ic Vce

520@2 mA , 5V 520@2 mA , 5V

Transition Frequency Ft

100MHz 100MHz

Collector-Emitter Saturation Voltage Vcesat@Ic Ib

650 mV @100 mA , 5 mA 650 mV @100 mA , 5 mA

Operating Temperature

- 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

Notes:- Show Stocked Products With Similar Attributes.

LBC857CDW1T1G Alternative Parts

We are delighted to provide the LBC857CDW1T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LBC857CDW1T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

RadioThe LBC857CDW1T1G is a NPN transistor packaged in a SOT-363 RoHS package manufactured by Leshan Radio. It is an integrated circuit designed for voltage amplifiers and switching applications. It has an operating temperature range of -55 °C to +150 °C, a maximum collector-emitter voltage of 30 V, and a maximum collector current of 0.2 A. This transistor features low noise level and high power gain, making it suitable for driving large loads. It is also characterized by a fast switching speed and a low saturation voltage.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
19 Ship by Thu. 13 Mar to Tue. 18 Mar MOQ : 20 Multiples : 20	20 : USD 0.0474 200 : USD 0.0369 600 : USD 0.0268 3000 : USD 0.0215 9000 : USD 0.019 21000 : USD 0.0178

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