X-On Electronics has gained recognition as a prominent supplier of LBC857CDW1T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. LBC857CDW1T1G Bipolar Transistors - BJT are a product manufactured by Leshan. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

LBC857CDW1T1G Leshan

Name: LBC857CDW1T1G
Brand: Leshan
SKU: LBC857CDW1T1G_Leshan
Availability: InStock
Rating: 5 (11 reviews)

LBC857CDW1T1G electronic component of Leshan

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See Product Specifications

Part No.	LBC857CDW1T1G
Manufacturer:	Leshan
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) SOT-363 RoHS
Datasheet:	LBC857CDW1T1G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

20: USD 0.0336 ea
Line Total: USD 0.67

Availability - 21
Ship by Fri. 03 Jan to Wed. 08 Jan

MOQ: 20 Multiples: 20
Pack Size: 20

LBC857CDW1T1G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

21

Ship by Fri. 03 Jan to Wed. 08 Jan

MOQ : 20
Multiples : 20

20 : USD 0.0336
200 : USD 0.0268
600 : USD 0.0231
3000 : USD 0.0209
9000 : USD 0.0189
21000 : USD 0.0179

Specifications

Manufacturer
Leshan Leshan

Product Category
Bipolar Transistors - BJT Bipolar Transistors - BJT

Brand
Leshan Leshan

Rohs
Y Y

Package
SOT - 363 SOT - 363

Transistor Type
2 PNP(Double) 2 PNP(Double)

Current - Collector Ic Max
100 mA 100 mA

Voltage - Collector Emitter Breakdown Max
45 V 45 V

Power - Max
380 mW 380 mW

Collector Cut-Off Current Icbo
15 nA 15 nA

Collector-Emitter Breakdown Voltage Vceo
45 V 45 V

Power Dissipation Pd
380 mW 380 mW

Collector Current Ic
100 mA 100 mA

Dc Current Gain Hfe@Ic Vce
520@2 mA , 5V 520@2 mA , 5V

Transition Frequency Ft
100MHz 100MHz

Collector-Emitter Saturation Voltage Vcesat@Ic Ib
650 mV @100 mA , 5 mA 650 mV @100 mA , 5 mA

Operating Temperature
- 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

Notes:- Show Stocked Products With Similar Attributes.

LBC857CDW1T1G Alternative Parts

We are delighted to provide the LBC857CDW1T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LBC857CDW1T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

RadioThe LBC857CDW1T1G is a NPN transistor packaged in a SOT-363 RoHS package manufactured by Leshan Radio. It is an integrated circuit designed for voltage amplifiers and switching applications. It has an operating temperature range of -55 °C to +150 °C, a maximum collector-emitter voltage of 30 V, and a maximum collector current of 0.2 A. This transistor features low noise level and high power gain, making it suitable for driving large loads. It is also characterized by a fast switching speed and a low saturation voltage.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
21 Ship by Fri. 03 Jan to Wed. 08 Jan MOQ : 20 Multiples : 20	20 : USD 0.0336 200 : USD 0.0268 600 : USD 0.0231 3000 : USD 0.0209 9000 : USD 0.0189 21000 : USD 0.0179

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