X-On Electronics has gained recognition as a prominent supplier of LN2312LT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. LN2312LT1G MOSFETs are a product manufactured by Leshan. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

LN2312LT1G Leshan

Name: LN2312LT1G
Brand: Leshan
SKU: LN2312LT1G_Leshan
Availability: InStock
Rating: 5 (11 reviews)

LN2312LT1G electronic component of Leshan

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See Product Specifications

Part No.	LN2312LT1G
Manufacturer:	Leshan
Category:	MOSFETs
Description:	MOSFET N Trench 20V 4.9A 1V @ 250uA 41 mÎ© @ 5A,4.5V SOT-23 (SOT-23-3) RoHS
Datasheet:	LN2312LT1G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.0601 ea
Line Total: USD 0.6

Availability - 3993
Ship by Thu. 05 Dec to Tue. 10 Dec

MOQ: 10 Multiples: 10
Pack Size: 10

LN2312LT1G More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

3993

Ship by Thu. 05 Dec to Tue. 10 Dec

MOQ : 10
Multiples : 10

10 : USD 0.0601
100 : USD 0.0497
300 : USD 0.0443
3000 : USD 0.0404
6000 : USD 0.0372
9000 : USD 0.0357

Specifications

Manufacturer
Leshan Leshan

Product Category
MOSFETs MOSFETs

Category
MOSFET MOSFET

Rohs
y y

Package
SOT - 23 (SOT - 23 - 3) SOT - 23 (SOT - 23 - 3)

Brand Category
Leshan Leshan

Fet Type
n trench n trench

Drain To Source Voltagevdss
20 V 20 V

Continuous Drain Current Id @ 25°C
4.9 A 4.9 A

Vgsth Max @ Id
1v @ 250ua 1v @ 250ua

Rds On Max @ Id Vgs
41 m @ 5a,4.5v 41 m @ 5a,4.5v

Power Dissipation Max
750 mW 750 mW

Drain Source Voltage Vdss
20 V 20 V

Continuous Drain Current Id
4.9 A 4.9 A

Power Dissipation Pd
750 mW 750 mW

Drain Source On Resistance Rdson@Vgs Id
41 mOhms @4.5V , 5A 41 mOhms @4.5V , 5A

Gate Threshold Voltage Vgsth@Id
1 V @250uA 1 V @250uA

Type
N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

LN2312LT1G Alternative Parts

We are delighted to provide the LN2312LT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LN2312LT1G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

Radio CompanyThe LN2312LT1G is a MOSFET transistor with N Trench technology manufactured by Leshan Radio Company. It is rated for 20V and 4.9A at 1V and 250uA, and 41mO @ 5A, 4.5V. It is packaged in the RoHS compliant SOT-23-3 (SOT-23) surface mount package. This transistor is suitable for a variety of applications such as level shifting, current-limiting, voltage switching and similar.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Leshan Radio may also be referenced as

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Availability	Price	Buy Price	Quantity
3993 Ship by Thu. 05 Dec to Tue. 10 Dec MOQ : 10 Multiples : 10	10 : USD 0.0601 100 : USD 0.0497 300 : USD 0.0443 3000 : USD 0.0404 6000 : USD 0.0372 9000 : USD 0.0357

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