X-On Electronics has gained recognition as a prominent supplier of LMBTH10LT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. LMBTH10LT1G Bipolar Transistors - BJT are a product manufactured by Leshan. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

LMBTH10LT1G Leshan

Name: LMBTH10LT1G
Brand: Leshan
SKU: LMBTH10LT1G_Leshan
Availability: OutOfStock
Rating: 5 (11 reviews)

LMBTH10LT1G electronic component of Leshan

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See Product Specifications

Part No.	LMBTH10LT1G
Manufacturer:	Leshan
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) NPN 25V SOT-23 (SOT-23-3) RoHS
Datasheet:	LMBTH10LT1G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

50: USD 0.0134 ea
Line Total: USD 0.67

Availability - 0

MOQ: 50 Multiples: 50
Pack Size: 50

LMBTH10LT1G More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 03 Jan to Wed. 08 Jan MOQ : 50 Multiples : 50	50 : USD 0.0134 500 : USD 0.0132 3000 : USD 0.0131 6000 : USD 0.0128

Specifications

Manufacturer Leshan Leshan
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Category Bipolar Transistors-BJT Bipolar Transistors-BJT
Rohs y y
Package SOT - 23 (SOT - 23 - 3) SOT - 23 (SOT - 23 - 3)
Brand Category Leshan Leshan
Transistor Type npn npn
Voltage - Collector Emitter Breakdown Max 25 V 25 V
Power - Max 300 mW 300 mW
Collector Cut-Off Current Icbo 100 uA 100 uA
Collector-Emitter Breakdown Voltage Vceo 25 V 25 V
Power Dissipation Pd 300 mW 300 mW
Collector Current Ic - -
Dc Current Gain Hfe@Ic Vce 60@4 mA , 10V 60@4 mA , 10V
Transition Frequency Ft 650MHz 650MHz
Collector-Emitter Saturation Voltage Vcesat@Ic Ib 500 mV @4 mA , 400uA 500 mV @4 mA , 400uA
Operating Temperature - 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

We are delighted to provide the LMBTH10LT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LMBTH10LT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

Radio CompanyThe LMBTH10LT1G is an NPN transistor in a SOT-23-3 form factor, specifically designed for low-voltage and low-power applications. It is manufactured by the Leshan Radio Company and has a 25V maximum operating voltage. It is compliant with RoHS regulations and is ideal for applications that require high speed switching and low noise performance. The device features an enhanced monolithic construction and a low thermal resistance package. It supports high-frequency gain, high-frequency FT, and high-speed switching characteristics. It is suitable for use as audio amplifiers, switching applications, and motor drivers.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Leshan Radio may also be referenced as

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