IGBT Power Module Power Module 1200 V 600 A IGBT Module RoHS MG12600WB-BR2MM Features Trench-gate field stop Free wheeling diodes IGBT technology with fast and soft reverse recovery Low saturation voltage and positive temperature Temperature sense coefficient included Fast switching and short T = 175 C J max tail current Applications Agency Approvals Industrial and servo UPS AGENCY AGENCY FILE NUMBER drives W elding E71639 Solar inverters R oHS compliant High-power converters Module Characteristics (T = 25 C, unless otherwise specified) C Symbol Parameters Test Conditions Values Unit T Max. Junction Temperature 175 C J max T Operating Temperature -40~150 C J op T Storage Temperature -40~125 C stg V Isolation Breakdown Voltage AC, 50 Hz(R.M.S), t = 1 minute 3000 V isol to heatsink Recommended (M5) 2.5~5 Nm Torque lolerminal Recommended (M6) 3~5 Nm Weight 350 g Absolute Maximum Ratings (T = 25 C, unless otherwise specified) C Symbol Parameters Test Conditions Values Unit IGBT V Collector Emitter Voltage T = 25 C 1200 V CES J V Gate Emitter Voltage 20 V GES T = 25 C 750 A C I DC Collector Current C T = 80 C 600 A C I Repetitive Peak Collector Current t = 1 ms 1200 A CM p P Power Dissipation Per IGBT 2500 W tot Diode V Repetitive Reverse Voltage T = 25 C 1200 V RRM J T = 25 C 600 I Average Forward Current A F(AV) C I Repetitive Peak Forward Current t = 1ms 1200 A FRM p 2 2 I t T = 125 C, t = 10 ms, V = 0 V 45 KA s J R MG12600WB-BR2MM 2016 Littelfuse, Inc 1 331 Specifications are subject to change without notice. Revised:10/05/16IGBT Power Module Power Module 1200 V 600 A IGBT Module Electrical and Thermal Specifications (T = 25 C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit IGBT V Gate Emitter Threshold Voltage V = V , I = 24 mA 5.0 5.4 6.4 V GE(th) CE GE C I = 600 A, V = 15 V, T = 25 C 1.7 2.15 C GE J chip V I = 600 A, V = 15 V, T = 125 C 1.9 Collector Emitter C GE J V CE(sat) Saturation Voltage I = 600 A, V = 15 V, T = 25 C 2.0 2.5 C GE J terminal V I = 600 A, V = 15 V, T = 125 C 2.4 C GE J V = 1200 V, V = 0 V, T = 25 C 100 A CE GE J I Collector Leakage Current CES V = 1200 V, V = 0 V, T = 125 C 1 mA CE GE J I Gate Leakage Current V = 0 V, V = 15 V, T = 125 C -400 400 nA GES CE GE J R Integrated Gate Resistor 0.5 Gint Q Gate Charge V = 600 V, I = 600 A , V = 15 V 3.4 C g CE C GE C Input Capacitance 60.5 nF ies V = 25 V, V = 0 V, f = 1 MHz CE GE C Reverse Transfer Capacitance 1.8 nF res T = 25 C 250 ns J t Turn-on Delay Time d(on) T = 125 C 280 ns J T = 25 C 220 ns J t Rise Time r T = 125 C 240 ns J V = 600 V CC T = 25 C 1000 ns J I = 600 A t Turn-off Delay Time C d(off) T = 125 C 1100 ns J R = 5 G T = 25 C 170 ns J t Fall Time V = 15 V f GE T = 125 C 190 ns J Inductive Load T = 25 C 20 mJ J E Turn-on Energy on T = 125 C 35 mJ J T = 25 C 105 mJ J E Turn-off Energy off T = 125 C 120 mJ J t 10 S , V = 15 V T = 125 C , psc GE J I Short Circuit Current 2400 A SC V = 600 V CC R Junction-to-Case Thermal Resistance (Per IGBT) 0.06 K/W thJC Diode I = 600 A, V = 0 V, T = 25 C 2.1 2.5 V F GE J V Forward Voltage chip F I = 600 A, V = 0 V, T = 125 C 2.2 V F GE J t Reverse Recovery Time 330 ns RR I = 600 A, V = 600 V F R I Max. Reverse Recovery Current 305 A RRM di /dt = -2700 A/s F Q Reverse Recovery Charge 96 C RR T = 125 C J E Reverse Recovery Energy 42 mJ rec R Junction-to-Case Thermal Resistance (Per Diode) 0.1 K/W thJCD NTC Characteristics (T = 25 C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit R Resistance T = 25 C 5 K 25 c B R = R exp B (1/T - 1/((298, 15 K)) 3375 K 25/50 2 25 25/50 2 MG12600WB-BR2MM 2016 Littelfuse, Inc 2 332 Specifications are subject to change without notice. Revised:10/05/16