MA4AGP907 MA4AGFCP910 AlGaAs Flip Chip PIN Diodes V4 Features Chip Dimensions Low Series Resistance MA4AGP907 and MA4AGFCP910 Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL Silicon Nitride Passivation Polyimide Scratch Protection RoHS Compliant Description M/A-COM Technology Solutions MA4AGP907 and MA4AGFCP910 are Aluminum Gallium Arsenide (AlGaAs) flip-chip PIN diodes. These devices are fabricated on OMCVD epitaxial wafers using a process optimized for high device uniformity and exceptionally low parasitics. The end result is a diode with an extremely low RC product, (0.1ps) and 2-3nS switching characteristics. They are fully passivated with silicon nitride and have an added polymer layer for scratch protection. The protective coating prevents damage to the junction and the anode air-bridge during handling and assembly. Notes: Applications 1. Gold Pads 14M thick. The ultra low capacitance of the MA4AGP907 and 2. Yellow areas indicate ohmic gold mounting pads. MA4AGFCP910 make them ideal for RF switch and 3. Dimensions A thru F are identical for both devices phase shifter applications through millimeter wave frequencies. The diodes are designed for use in INCHES MM pulsed or CW applications, where single digit nS DIM MIN. MAX. MIN. MAX. switching speed is required. The low capacitance of these diodes make them ideal for use in microwave A 0.0260 0.0270 0.6604 0.6858 multi-throw switch assemblies, where the series B 0.0135 0.0145 0.3429 0.3683 capacitance of each off port adversely loads the input C 0.0065 0.0075 0.1651 0.1905 and affects VSWR. D 0.0043 0.0053 0.1092 0.1346 E 0.0068 0.0073 0.1727 0.1854 Absolute Maximum Ratings T = +25C AMB (unless otherwise specified) F 0.0182 0.0192 0.4623 0.4877 Parameter Absolute Maximum MA4AGP907 -50V Reverse Voltage MA4AGFCP910 -75V Operating Temperature -55C to +125C Storage Temperature -55C to +150C Junction Temperature +175C Dissipated Power (RF & DC ) 50mW C.W. Incident Power +23 dBm Mounting Temperature +280C for 10 seconds 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under Visit www.macom.com for additional data sheets and product information. development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or produce in volume is not guaranteed. information contained herein without notice. MA4AGP907 MA4AGFCP910 AlGaAs Flip Chip PIN Diodes V4 Electrical Specifications T = +25C AMB MA4AGP907 MA4AGFCP910 Parameter Symbol Conditions Units Typ. Max. Typ. Max. MA4AGP907 -5V,1MHz Total Capacitance C pF 0.025 0.030 0.018 0.021 T MA4AGFCP910 -10V,1MHz 1 Total Capacitance C -5V, 10GHz pF 0.020 0.018 0.021 T Series Resistance R +10mA, 1MHz 5.2 7.0 S 2 R +10mA, 10GHz 4.2 5.2 6.0 Series Resistance S Forward Voltage V +10mA V 1.33 1.45 1.33 1.45 F MA4AGP907 V = -50V R 3 Reverse Leakage Current I A 10 10 R MA4AGFCP910 V = -75V R T 4 RISE 10GHz nS 2 2 Switching Speed T FALL Carrier Lifetime T I = 10mA / I = 6mA nS 4 L F REV Notes: 1) Capacitance is determined by measuring the isolation of a single series diode in a 50 transmission line at 10GHz. 2) Series resistance is determined by measuring the insertion loss of a single series diode in a 50 transmission line at 10GHz. 3) The max rated V ( Reverse Voltage ) is sourced and the resultant reverse leakage current, Ir, is R measured to be <10 A 4) Switching speed is measured between 10% and 90% or 90% to 10% RF voltage for a single series mounted diode. Driver delay is not included. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under Visit www.macom.com for additional data sheets and product information. development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or produce in volume is not guaranteed. information contained herein without notice.