MA4FCP305 MACOM

MA4FCP305 Silicon Flip Chip PIN Diode Rev. V6 Features 1269 Package Outline Low Series Resistance : 1.7 Low Capacitance : 50fF Fast Switching Speed : 20nS Silicon Nitride Passivation Polyimide Scratch Protection Designed for Automated Pick and Place Inser- tion Rugged Design RoHS Compliant Description The MA4FCP305 is a silicon flip chip PIN diode fabricated using MACOMs HMIC process. The epitaxial wafers used to fabricated this flip chip are designed for repeatable electrical characteristics and extremely low parasitics. The diode is fully passivated with silicon nitride and also has an additional layer of polyimide for scratch protection. These protective coatings prevent damage to the junction area during manual or automated handling making it suitable for pick and place insertion. Absolute Maximum Ratings T = +25C (unless otherwise specified) AMB Inches Millimeters Parameter Absolute Maximum Dim. Min. Max. Min. Max. Forward Current 100 mA A 0.0269 0.0289 0.683 0.733 Reverse Voltage - 40 V B 0.0135 0.0155 0.343 0.393 Operating Temperature - 55C to + 150C C 0.0040 0.0080 0.102 0.203 Storage Temperature - 55C to + 150C D 0.0041 0.0061 0.105 0.155 Dissipated Power 230 mW E 0.0124 0.0144 0.315 0.365 Mounting Temperature +300C for 10 seconds F 0.0069 0.0089 0.175 0.225 1. Yellow hatched areas indicate backside ohmic gold contacts. 1. Exceeding any of these limits may cause permanent damage. 2. Total backside metal thickness 0.1 m. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MA4FCP305 Silicon Flip Chip PIN Diode Rev. V6 Electrical Specifications + 25 C Parameters Conditions Symbol Units Min. Typ. Max. 1 Total Capacitance -10V, 1MHz C pF 0.060 T 1,3 Total Capacitance -10V, 1GHz C pF 0.050 T 2,3 Series Resistance +50mA , 100MHz R 1.7 S 2,3 Series Resistance +50mA , 1GHz R 2.1 S Forward Voltage +100mA V V 1.05 1.25 F Reverse Voltage -10A V V -40 -50 R Reverse Current -40V I A -10 R 50 90 % Lifetime + 10mA / - 6mA T ns 25 L 4 Steady State Thermal Resistance C/W 640 1. Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance, Cp. 2. Series resistance R is equivalent to the total diode series resistance including the junction resistance Rj. S 3. Rs and Cp measured on an HP4291A with die mounted in an ODS-186 package. 4. Steady-state Thermal Resistance measured with die mounted in an ODS-186 package. ESD These devices very susceptible to ESD and are rated Class 0 (0-199V), HBM, per MIL-STD-883, method 3015.7 Although the die are rated Class 0, they must be handled in a dust free, anti-static environment. Specifications Subject to Change Without Notice. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: