MA4GP022-277 MACOM

GaAs PIN Diode Chips V3 Features Anode May be Driven Directly by TTL Signals RoHS Compliant Low Series Resistance Fast Switching Speed No Reverse Bias Required RoHS Compliant Description Gallium Arsenide PIN diodes offer improved performance characteristics over silicon in many microwave semiconductor applications. These benefits result from the intrinsic semiconductor properties of GaAs. Its inherent high carrier mobil- ity results in a low resistance fast switching device. The low carrier concentration in the I region layer produces a near zero punch through bias voltage. Gallium Arsenide s high band gap also assures it will operate at high operating temperatures. Switching speeds in the low nanosecond range Full Area Cathode using an inexpensive TTL buffer logic is attainable with GaAs PIN diodes. This performance can be achieved because GaAs PIN diodes exhibit high impedance at a positive bias (up to .5V). Reverse bias is not required for many GaAs PIN diode applications. Low loss, in switch and phase shifter circuits at frequencies up to 40 GHz is possible as a result of low parasitic series resistance in the conducting and non-conducting states. MIL-STD 750 Environmental Ratings M/A-COMs Technology Solutions GaAs PIN diode chips are also available in several different pack- Parameter Method Level age styles. (See page 4 of this datasheet) 1 5cycles Absolute Maximum Ratings Temp. Cycling 1051 -65C to +150C Parameter Maximum Value Vibration 2056 15gs Operating Temperature -65C to +175C Storage Temperature -65C to +175C Constant Acceleration 2006 20,000gs Power Dissipation 0.25W 25C Moisture Resistance Junction Temperature +175C 1021 10 Days (Packaged diodes) Mounting Temperature +320C for 10 seconds 1. Exceeding these limits may cause permanent damage. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: GaAs PIN Diode Chips V3 GaAs Chip Specification T = +25C AMB Nominal Characteristics Max. Rev. 2 1 3 Max. Series Res. Volt. Max. Cap. Carrier Lifetime Switching Speed Part Number 1 GHz 1 MHz 7 GHz T I = 10 mA L FOR R 20 mA V < 10 A C -10 V S R j I = 6 mA REV S S V pF DC MA4GP022-277 50 0.15 1.0 20 10 4 MA4GP030-277 100 0.06 2.0 25 15 Notes: 1. V ( Reverse Voltage ) is sourced and the resultant reverse leakage current, Ir, is measured to be <10A. R 2. Chip is mounted into case style ODS 30 ceramic package. 3. Switching speed is measured between 1 dB and 20 dB loss in a shunt mounted switch. 4. Available as chip with flying leads. Part number is MADP-000030-13930G. Case Style 277 (Chip) Typical TTL Driver Circuit A B B C Anode Dimension Mils Millimeters A 7 .5 .178 .013 B 11 1 .279 .025 C 2.2 .3 .056 .008 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: