Packaged PIN Diodes Rev. V13 Maximum Power Dissipation Features High Power Cathode Heatsink Packages Fast Speed P = T (max oper.) -25C DISS 30,31,36,43,120, Voltage Ratings to 1500 Volts Thermal Resistance 150,255 258,296,1072,1079 Wide Selection of Carrier Lifetimes Wide Selection of Capacitances Leaded Packages Assortment of Packages Styles P = 250 mW DISS +25C Available Screened for Military Applications Surface Mount Package RoHS* Compliant +2 5 C P = 300 mW DISS Description and Applications Co-Axial Packages MACOMs broad line of packaged PIN diodes encompass a comprehensive range of electrical characteristics and package outlines. This diverse union of semiconductor technology and chip packaging gives considerable flexibility to the circuit designer. The fast switching series of packaged PIN 31 36 30, 296 120,255 diodes utilize a thin I-region, silicon oxide or glass passivated chip which provides for low leakage current and low insertion loss. With the use of in Leaded/Surface Mount Packages process control monitors to regulate wafer Thru Hole fabrication parameters, these devices will achieve consistent performance in control circuit applications. The high voltage product line of packaged PIN diodes employs MACOM 1088 CERMACHIP passivation process which provides 276 for a hard glass encapsulation that hermetically seals and protects the active area of the chip. These packaged CERMACHIP PIN diodes are ideally suited for use in high power applications 1072,1079 186 1056 144 where high level RF voltages are present. The diode chips are bonded into sealed ceramic packages that are designed for the most stringent electrical and environmental conditions. An extensive choice of package styles are available which may be used in a wide variety of RF microwave circuits. The packaged PIN diodes series are designed to have a high inherent reliability and may be ordered screened to meet many MIL-STD requirements. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: Packaged PIN Diodes Rev. V13 100 to 250 V Fast Switching PIN Diodes Specifications (T = +25C) AMB Minimum Maximum Maximum Maximum Reverse Thermal Nominal Characteristics 1 Capacitance Series Res. 2 Voltage Resistance Part Number C -10 V R 10 mA Carrier I-Region T S 6 I <10 A T 5 R RR f = 1 MHz f = 500 MHz Lifetime Width V pF C/W ns ns m MA4P202-120 100 0.25 2.50 60 60 5 12 MA4P203-30 100 0.35 1.50 30 100 20 12 MA4P303-36 200 0.35 1.50 30 200 60 20 3 4 MA4P404-30 250 0.40 0.70 20 1000 100 30 1. Capacitance values shown are for the case style specified in the part number, other case style will result in different values. 2. The minimum specified V (Reverse Voltage) is sourced and the resultant reverse leakage current, Ir, is measured to be <10 A R 3. At V = -50 V R 4. R measured at I = +50 mA, f = 100 MHz. s F 5. Nominal carrier life time specified with diode biased at I = +10 mA , I = -6 mA F REV 6. Nominal T (reverse recovery time) specified with diode biased at I = +20 mA , I = -200 mA. RR F REV Package Options Consult the Package Availability Table on page 7 for more package style choices. 35 to 500 V MELF General Purpose Switching Diodes Specifications (T = +25C) AMB Minimum Maximum Maximum CW Power Reverse Nominal Characteristics 1 Capacitance Series Res. Dissipation 8 Voltage 7 Carrier I Part Number F C -10 V R 10 mA I-Region T S I <10 A Life- R When f = 1 MHz f = 100 MHz Width 9 R = 75 W time S V pF W mA s mm MA4PH235-1072T 35 1.2 0.50 1.0 0.3 0.4 MADP-000593-10720T 150 1.5 0.55 10.0 1.0 1.0 MA4PH236-1072T 600 0.5 3.0 3.75 1.5 2.0 MA4PH237-1079T 200 1.5 0.6 50 mA 2.0 3.0 3.0 MA4PH238-1072T 200 0.5 6.0 1.0 0.30-0.60 2.0 4.0 MA4PH239-1079T 200 0.8 25.0 2.0 1.20-2.40 6.0 14.0 10 MADP-000234-10720T 500 1.5 0.25 100 mA 5.0 3.0 2.0 7. Only available in case styles indicated. 8. The minimum specified V (Reverse Voltage) is sourced and the resultant reverse leakage current, Ir, is measured to be <10 A. R 9. Nominal carrier life time specified with diode biased at I = +10 mA , I = -6 Ma F REV 10. Ct tested at 100 V 1072,1079 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: