Packaged PIN Diodes Rev. V14 Features Co-Axial Packages High Power Fast Speed Voltage Ratings to 1500 Volts Wide Selection of Carrier Lifetimes Wide Selection of Capacitances 31 36 30, 296 120,255 Assortment of Packages Styles Available Screened for Military Applications RoHS* Compliant Leaded/Surface Mount Packages Hole Thru Description and Applications MACOMs broad line of packaged PIN diodes encompass a comprehensive range of electrical characteristics and package outlines. This diverse 1088 276 union of semiconductor technology and chip packaging gives considerable flexibility to the circuit designer. The fast switching series of packaged PIN diodes utilize a thin I-region, silicon oxide or glass passivated chip which provides for low leakage 1072,1079 186 1056 144 current and low insertion loss. With the use of in process control monitors to regulate wafer fabrication parameters, these devices will achieve Threaded Packages consistent performance in control circuit applications. The high voltage product line of packaged PIN diodes employs MACOM CERMACHIP passivation process which provides for a hard glass encapsulation that hermetically seals and protects the active area of the chip. These packaged CERMACHIP PIN diodes are ideally suited for use in high power applications where high level RF voltages are present. The diode Maximum Power Dissipation chips are bonded into sealed ceramic packages that are designed for the most stringent electrical and Package Style Absolute Maximum P DISS environmental conditions. An extensive choice of package styles are available which may be used in a T (max. oper.) -25C Cathode Heatsink wide variety of RF microwave circuits. The packaged Thermal Resistance PIN diodes series are designed to have a high Leaded +25C 250 mW inherent reliability and may be ordered screened to meet many MIL-STD requirements. Surface Mount +25C 300 mW * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: Packaged PIN Diodes Rev. V14 PIN Diodes Specifications (T = +25C) AMB 100 to 250 V Fast Switching Minimum Maximum Maximum Reverse Nominal Characteristics 1 Capacitance Series Res. Maximum 2 Voltage Thermal Part Number C -10 V R 10 mA Resistance Carrier I-Region T S 6 I <10 A T R 5 RR f = 1 MHz f = 500 MHz Lifetime Width V pF C/W ns ns m MA4P202-120 100 0.25 2.50 60 60 5 12 MA4P203-30 100 0.35 1.50 30 100 20 12 MA4P303-36 200 0.35 1.50 30 200 60 20 3 4 MA4P404-30 250 0.40 0.70 20 1000 100 30 1. Capacitance values shown are for the case style specified in the part number, other case style will result in different values. 2. The minimum specified V (Reverse Voltage) is sourced and the resultant reverse leakage current, Ir, is measured to be <10 A R 3. At V = -50 V R 4. R measured at I = +50 mA, f = 100 MHz. s F 5. Nominal carrier life time specified with diode biased at I = +10 mA , I = -6 mA F REV 6. Nominal T (reverse recovery time) specified with diode biased at I = +20 mA , I = -200 mA. RR F REV Package Options Consult the Package Availability Table on page 7 for more package style choices. 35 to 500 V MELF General Purpose Switching Minimum Maximum Maximum Reverse Nominal Characteristics 1 Capacitance Series Res. 8 Voltage CW Power 7 Dissipation I Part Number F C -10 V R 10 mA Carrier I-Region T S I <10 A R When 9 f = 1 MHz f = 100 MHz Lifetime Width R = 75 W S V pF W mA s m MA4PH235-1072T 35 1.2 0.50 1.0 0.3 10 MADP-000593-10720T 150 1.5 0.55 10.0 1.0 20 MA4PH236-1072T 600 0.5 3.0 3.75 1.5 58 MA4PH237-1079T 200 1.5 0.6 50 mA 2.0 3.0 50 MA4PH238-1072T 200 0.5 6.0 1.0 0.30-0.60 2.0 100 MA4PH239-1079T 200 0.8 25.0 2.0 1.20-2.40 6.0 370 10 MADP-000234-10720T 500 1.5 0.25 100 mA 5.0 3.0 50 7. Only available in case styles indicated. 8. The minimum specified V (Reverse Voltage) is sourced and the resultant reverse leakage current, Ir, is measured to be <10 A. R 9. Nominal carrier life time specified with diode biased at I = +10 mA , I = -6 Ma F REV 10. Ct tested at 100 V 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: