MA4P7470F-1072T Rev. V2 Non Magnetic MELF PIN Diode Features Non-Magnetic Package Suitable for MRI Applications Rectangular MELF SMQ Ceramic Package Hermetically Sealed Low Rs for Low Insertion Loss Long for Low Intermodulation Distortion L Low Cj for High Series Isolation High Average Incident Power Handling Capability RoHS Compliant Description and Applications The MA4P7470F-1072T is a surface mountable PIN diode in a non-magnetic Metal Electrode Leadless Faced (MELF) package. The device incorporates M/A-COM Technology Solutions time Designed for Automated Assembly proven HIPAX technology to produce a low MELF PIN diodes are designed for high volume tape inductance ceramic package with no ribbons or and reel assembly. The rectangular package design whisker wires. The package utilizes M/A-COM is excellent for automatic pick and place assembly Technology Solutions new non-magnetic plating methods. The parallel flat surfaces are suitable for process to provide a hermetically sealed package key jaw or vacuum pickup techniques. All solderable with extremely low permeability. Incorporated within surfaces are tin plated and compatible with industry the package is a glass passivated PIN chip that is standard reflow and vapor phase soldering methods. full face bonded on both the cathode and anode to maximize surface area for low electrical and thermal resistance. The low thermal resistance provides excellent performance at high incident power levels of up to 200 watts CW. The MA4P7470F-1072T has been comprehensively characterized both electrically and mechanically to 1 Absolute Maximum Ratings +25C ensure repeatable and predictable performance. The MA4P7470F-1072T is a non-magnetic device Parameter Absolute Maximum which has similar electrical performance to its magnetic counterpart the MA4P7417F-1072T. The Operating Temperature -65C to +125C diode is well suited for use in low loss, low Storage Temperature -65C to +150C distortion, high power switching circuits. It was designed to be used in a high magnetic field Chip Junction Temperature +175C Continuous environment from HF through UHF frequencies. Diode Mounting Temperature +265C for 10 seconds This device is designed to meet the most rigorous electrical and mechanical requirements of MRI RF C.W. Incident Power +53dBm C.W. environments. Forward D.C. Current +150 mA Reverse D.C. Voltage -10uA - 800V 1. Exceeding any of these limits may cause permanent damage. ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under Visit www.macom.com for additional data sheets and product information. development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or produce in volume is not guaranteed. information contained herein without notice. MA4P7470F-1072T Rev. V2 Non Magnetic MELF PIN Diode Electrical Specifications +25 C Parameter Symbol Condition Unit Value Maximum Forward Voltage V I = +100mA 1.0V F F DC 1 Minimum Reverse Voltage V Ir = -10uA l 800 l V R DC Maximum Total Capacitance C -100V 100MHz 0.7pF T Maximum Series Resistance R +100mA 100MHz 0.8 S Minimum Parallel Resistance R -10V 100MHz 50K P +6mA / -10mA Nominal Carrier Lifetime 6.5 s L (50% - 90% Voltage) Nominal I-Region Length - m 140 m I = 1A, I = 10mA, H L Maximum Thermal Resistance 13C/W T = 1mS Maximum Power Dissipation in Free Air W I = +100mA 4W F Maximum Power Dissipation with heatsink P I = +100mA 12W D F Note: 1. The minimum specified V (Reverse Voltage) is sourced and the resultant reverse leakage current, Ir, is measured to be <10 A R Environmental Screening Capability MELF devices may be used in industrial or military applications and can be screened to meet the environmental requirements of MIL-STD-750, MIL-STD-202 as well as other military standards. The table below lists some of the MIL-STD 750 tests the device is designed to meet. MIL-STD-750 Test Method Description High Temperature Storage 1031 +150C, for 340 Hours Temperature Shock 1051 -65C to +125C, 20 Cycles HTRB 1038 80% of rated V , +150C, for 96 Hours R Moisture Resistance 1021 No Initial Conditioning, 85 % RH, +85C Gross Leak 1071 Cond. E Dye Penetrant Visual Vibration Fatigue 2046 20,000 Gs, 60 Hz, x, y, z axis Solderability 2026 Test Temperature = +245C ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under Visit www.macom.com for additional data sheets and product information. development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or produce in volume is not guaranteed. information contained herein without notice.