MA4PBL027 Rev. V3 HMIC Silicon Beam Lead PIN Diode Outline Drawing and Dimensions Features No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch and Impact Protection Low Parasitic Capacitance and Inductance Ultra Low Capacitance < 40 fF Excellent RC Product < 0.10 ps High Switching Cutoff Frequency > 110 GHz 110 Nanosecond Minority Carrier Lifetime Driven by Standard +5 V TTL PIN Diode Driver Description The MA4PBL027 is a silicon beam lead PIN diode fabricated with MACOMs HMIC process. It features one silicon pedestal embedded in a low loss, low dispersion glass which supports the beam-leads. The diode is formed on the top of the INCHES MM pedestal, and air-bridges connect the diode to the DIM MIN. MAX. MIN. MAX. beam-leads. The topside is fully encapsulated with silicon nitride and also has an additional polymer A 0.033 0.035 0.838 0.889 layer for scratch and impact protection. These protective coatings prevent damage to the diode B 0.0148 0.0164 0.376 0.416 junction and air-bridge during handling and C 0.004 0.006 0.1016 0.1524 assembly. The diodes exhibit low series resistance, low capacitance, and extremely fast switching speed. D 0.0115 0.0135 0.2921 0.343 E 0.0048 0.0065 0.1220 0.165 Applications F 0.0082 0.010 0.208 0.254 The ultra low capacitance, low RC product and low profile of the MA4PBL027 makes it an ideal choice for use in microwave and millimeter wave switch designs, where low insertion loss and high isolation are required. The low bias levels of 10 mA in the low Ordering Information loss state and 0 V in the isolation state allows the use of a simple 5 V TTL gate driver. These diodes Part Number Package can be used as switching arrays on radar systems, high speed ECM circuits, optical switching networks, 1 MA4PBL027 100 piece Gel Pack instrumentation, and other wideband multi-throw switch assemblies. 1. Parts packed circuit side down. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MA4PBL027 Rev. V3 HMIC Silicon Beam Lead PIN Diode Electrical Specifications at T = +25C A Parameter Test Conditions Units Min. Typ. Max. -10 V, 1 MHz 0.030 0.040 -40 V, 1 MHz 0.026 Total Capacitance pF -10 V,100 MHz 0.018 -40 V,100 MHz 0.015 4.0 10 mA / 100 MHz 3.5 Series Resistance 20 mA, 100 MHz 3.0 10 mA, 1 GHz 3.5 Forward Voltage 20 mA V 0.7 0.91 0.95 Leakage Current -90 V A 1 Minority Carrier Lifetime I = +10 mA, I = 6 mA ns 150 200 F R 2. Total capacitance (C ) is equivalent to the sum of Junction Capacitance (C ) and Parasitic Capacitance (C ). T J PAR 3. Series resistance (R ) is equivalent to the total diode resistance: R = Junction Resistance (R ) + Ohmic Resistance (R ). S S J C 4,5 Absolute Maximum Ratings Handling Procedures Please observe the following precautions to avoid Parameter Absolute Maximum damage: Forward Current 100 mA Static Sensitivity Reverse Voltage 90 V These electronic devices are sensitive to electrostatic discharge (ESD) and can be damaged Operating Temperature -55C to +125C by static electricity. Proper ESD control techniques should be used when handling these HBM class 1 Storage Temperature -55C to +150C devices. Junction Temperature +175C General Handling RF CW Incident Power 30 dBm CW A polymer layer provides scratch protection for the diode junction area and anode air bridge. RF & DC Dissipated Power 150 mW However, the leads of beam lead devices are very fragile and must be handled with extreme care. The Mounting Temperature 235C for 10 sec. leads can easily be distorted or broken by the normal pressures if not careful while handling with 4. Exceeding any one or combination of these limits may cause permanent damage to this device. tweezers. A vacuum pencil with a 27 tip is the 5. MACOM does not recommend sustained operation near these preferred choice for picking and placing. survivability limits. Attachment These devices were designed to be inserted onto hard or soft substrates. Recommended methods of attachment include thermo-compression bonding, parallel-gap welding and electrically conductive silver epoxy. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: