MA4SPS302 MACOM

MA4SPS302 TM SURMOUNT PIN Diode Rev. V5 RoHS Compliant Features MA4SPS302 Surface Mount No Wire Bonding Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch Protection Low Parasitic Capacitance and Inductance High Average and Peak Power Handling RoHS Compliant Description This device is a Silicon-Glass PIN diode chip TM fabricated with M/A-COM Techs patented HMIC process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls 1. Backside metal: 0.1 M thick. electrically conductive. Selective backside 2. Yellow hatched areas indicate backside ohmic gold metallization is applied producing a surface mount device. This vertical conic topology provides for exceptional heat transfer from the active area. The topside is fully encapsulated with silicon nitride and INCHES MM DIM has an additional polymer layer for scratch and Min. Max. Min. Max. impact protection. These protective coatings prevent damage to the junction and the anode air-bridge A 0.052 0.056 1.321 1.422 during handling and assembly. B 0.020 0.024 0.508 0.610 C 0.004 0.006 0.102 0.152 Absolute Maximum Ratings D 0.018 0.020 0.457 0.508 T = 25C (unless otherwise specified) AMB E 0.014 0.016 0.356 0.406 Parameter Absolute Maximum Forward Current 600mA Reverse Voltage -100V Operating Temperature -55C to +125C Storage Temperature -55 C to +150C Junction Temperature +175C Dissipated Power 800mW ( RF & DC ) Mounting Temperature +260C for 30 seconds 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MA4SPS302 TM SURMOUNT PIN Diode Rev. V5 RoHS Compliant Electrical Specifications T = +25C AMB Symbol Conditions Units Min Typ Max 1 C -40V, 1MHz pF 0.40 0.45 T 1,3 C -40V, 1GHz pF 0.36 T 2,3 R 10mA, 100MHz W 1.3 2.2 S V 10mA V 0.84 1.00 F V -10A V -70 -100 R I -70 V nA 100 1000 R 4 C/W 125 R I =1A, I =10mA qJL H L TL +10mA / -6mA ns 460 1. Total Capacitance, C , is equivalent to the sum of Junction Capacitance and Parasitic Capacitance. T C = C (Junction Capacitance) + C (Parasitic Capacitance) T J PAR 2. Series resistance R is equivalent to the total diode resistance: S R = R (Junction Capacitance Junction Resistance) + R (Ohmic Resistance) S J O 3 R and C are measured on an HP4291A Impedance Analyzer with die mounted in an ODS-186 package S T with conductive silver epoxy. Rs vs. Forward Current and Frequency C vs. Reverse Voltage and Frequency T 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: