MA4SPS402 MACOM

MA4SPS402 TM Rev V6 SURMOUNT PIN Diode RoHS Compliant Features Surface Mount No Wire Bonding Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch Protection Low Parasitic Capacitance and Inductance Higher Average and Peak Power Handling RoHS Compliant Description This device is a Silicon-Glass PIN diode chip fabricated with M/A-COM Technology Solutions pat- TM ented HMIC process. This device features two 1. Backside metal: 0.1 M thick. silicon pedestals embedded in a low loss, low dis- 2. Yellow hatched areas indicate backside ohmic gold persion glass. The diode is formed on the top of one pedestal and connections to the backside of the de- INCHES MM vice are facilitated by making the pedestal sidewalls DIM electrically conductive. Selective backside Min. Max. Min. Max. metallization is applied producing a surface mount device. This vertical conic topology provides for A 0.046 0.051 1.170 1.290 exceptional heat transfer from the active area. The B 0.017 0.021 0.432 0.533 topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and C 0.004 0.006 0.102 0.203 impact protection. These protective coatings prevent damage to the junction and the anode air-bridge D 0.015 0.017 0.381 0.432 during handling and assembly. E 0.014 0.016 0.356 0.406 Applications These surmount devices are suitable for usage in Absolute Maximum Ratings T = 25C AMB moderate incident power (5W C.W.) or higher incident peak power (50W) series, shunt, or (unless otherwise specified) series-shunt switches. Lower parasitic inductance, Parameter Absolute Maximum 0.45nH, and excellent RC constant (0.23pS), make the devices ideal for higher frequency switch Forward Current 250mA elements compared to their plastic device Reverse Voltage -100V counterparts. Operating Temperature -55C to +125C Storage Temperature -55 C to +150C Junction Temperature +175C Dissipated Power 1W ( RF & DC ) Mounting Temperature +280C for 30 seconds M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MA4SPS402 TM Rev V6 SURMOUNT PIN Diode RoHS Compliant Electrical Specifications T = +25C AMB Symbol Conditions Units Min. Typical Max. 1,3 C -40V, 1MHz pF 0.055 0.06 T 1,3 C -40V, 1GHz pF 0.045 T 2,3 R 10mA, 1GHz 5.0 5.8 S V 10mA V 0.90 1.00 F V -10 A V -70 -100 R I -70V A -0.1 -10 R 4 R I =1A, I =10mA C/W 150 JL H L +10mA / -6mA T nS 200 400 L ( 50% - 90% V ) 1. Total Capacitance, C , is equivalent to the sum of Junction Capacitance and Parasitic Capacitance. T C = C (Junction Capacitance) + C (Parasitic Capacitance) T J PAR 2. Series resistance R is equivalent to the total diode resistance: S R = R (Junction Capacitance Junction Resistance) + R (Ohmic Resistance) S J O 3 R and C are measured on an HP4291A Impedance Analyzer with die mounted in an ODS-186 package S T with conductive silver epoxy. 4. Steady-state R measured with die mounted in an ODS-186 package with conductive silver epoxy. JL M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: