MADL-011023-14150T PIN Diode Limiter Rev. V3 10 MHz - 12 GHz Features Functional Schematic 3 Terminal LPF Broadband Shunt Structure 10 MHz - 12 GHz Broadband Frequency >50 dBm Peak Power Handling >40 dBm CW Power Handling 6 N/C N/C 1 <0.2 dB Insertion Loss 20 dBm Flat Leakage Power Lead-Free 1.5 x 1.2 mm 6-lead TDFN Package RF 5 RF IN 2 OUT o RoHS* Compliant and 260 C Reflow Compatible Description N/C 4 N/C 3 7 GND The MADL-011023 is a PIN diode limiter assembled in a lead-free 1.5 x 1.2 mm 6-lead TDFN plastic Top view package. This PIN diode limiter provides exceptional low and high signal frequency operation from 10 MHz to 12 GHz. 3 Pin Configuration This device is ideally suited for higher frequency and lower flat leakage limiter microwave circuit applications where compact and higher performance Pin No. Pin Name Description surface mount diode assemblies are required. 1 N/C No Connection 2 RF RF Input IN 1,2 Ordering Information 3 N/C No Connection Part Number Package 4 N/C No Connection MADL-011023-14150T 3000 piece reel 5 RF RF Output OUT MADL-011023-000SMB Sample board 6 N/C No Connection 4 1. Reference Application Note M513 for reel size information. 7 Paddle Ground 2. All sample boards include 5 loose parts. 3. MACOM recommends connecting unused package pins to ground. 4. The exposed pad centered on the package bottom must be connected to RF, DC, and thermal ground. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: MADL-011023-14150T PIN Diode Limiter Rev. V3 10 MHz - 12 GHz Electrical Specifications: T = +25C A Parameter Test Conditions Units Min. Typ. Max. Insertion Loss P incident = -10 dBm, F = 750 MHz dB 0.05 0.10 Return Loss P incident = -10 dBm, F = 750 MHz dB 35 P1dB Input Compression Power F = 1 GHz dBm 8 5 C.W. Incident Power F = 1 GHz dBm 40 5 Peak Incident Power 1 s, 1 % duty 1 GHz dBm 50 CW Flat Leakage Power F = 1 GHz dBm 20 Pulsed Flat Leakage Power 50 dBm, 1 s, 1 % duty 1 GHz dBm 26 Spike Leakage Power 50 dBm, 1 s, 1 % duty 1 GHz dBm 28 Spike Leakage Energy 50 dBm, 1 s, 1 % duty 1 GHz ergs 0.1 Recovery Time 50 dBm, 1 s, 1 % duty 1 GHz ns 100 (1 dB of Insertion Loss) Input 3rd Order F1 = 1.000 GHz, F2 = 1.010 GHz 0 dBm dBm 20 Intermodulation Products (IIP3) 5. Incident power ratings defined with 1.2:1 source VSWR and 1.2:1 max load VSWR. 6,7 Absolute Maximum Ratings Parameter Absolute Maximum Peak Incident Power 48 dBm 1 s pulse, 1% duty +85C CW Incident Power +85C 37 dBm Junction Temperature 175C Operating Temperature -65C to +125C Storage Temperature -65C to +150C 6. Exceeding any one or combination of these limits may cause permanent damage to this device. 7. MACOM does not recommend sustained operation near these survivability limits. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: