Silicon Limiter Diodes MA4L & MADL Series Rev. V28 1 Features Available Packages Low Insertion Loss and Noise Figure High Peak and Average Operating Power Various P1dB Compression Powers Au Doped Devices for Lower Recovery Time Non-Au doped devices for Lower Flat Leakage Power 30 113 31,32 120 1056 Proven Reliable, Silicon Nitride Passivation RoHS Compliant Description The MA4L and MADL Series are silicon PIN limiter diodes with small and medium I-region lengths which are specifically designed for high signal 1088 137 186 applications. The devices are designed to provide low insertion loss, at zero bias, as well as low flat leakage power with fast signal response/recovery Chip with Chip Chip times. Parts are available as discrete die or Flying Leads assembled into a variety of surface mount or ceramic pill packages. See the Available Case Style table for the specific ceramic package styles and their availability for individual part numbers. 134 1421 1387 Applications 1428 1388 The MA4L and MADL Series of PIN limiter diodes are designed for use in passive limiter control 1. Packages not to size, dimensions can be found on the MACOM website. circuits to protect sensitive receiver components such as low noise amplifiers (LNA), detectors, and mixers covering the 10 MHz to 18 GHz frequency range. 2 Chip Outlines ODS134 ODS1421 A A B ODS Dimension mils mm A (squared) 15 2 0.381 0.51 134, 1421 , 1428 2 B 7 1 0.178 0.025 2. For the MADL-000301-01340W, MADL-000301-13870G, MA4L401-134 and MADL-000401-13870G, B dimension, is 10 1 mils. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: Silicon Limiter Diodes MA4L & MADL Series Rev. V28 Electrical Specifications: T = 25C A Gold Doped Die Carrier 3 C C R 5 CW J J S V 4 5 Lifetime I-Region Contact B 10 V 0 V 10 mA Thermal (10 A) I = +10 mA Thickness Diameter 5 F ( 1 MHz) ( 1 MHz) (500 MHz) Resistance I = -6 mA Part Number R Min./Max. Typ. Max. Typ. Max. Nominal Characteristics V pF pF pF Ohms ns m mils C/W MA4L011-134 15/35 0.13 0.18 0.18 2.10 10 2 1.2 35 MA4L021-134 20/35 0.11 0.16 0.20 2.10 10 2 1.2 35 MA4L022-134 20/35 0.12 0.17 0.19 2.00 10 2 1.2 35 MA4L031-134 30/50 0.14 0.20 0.21 2.00 20 3 1.4 34 MA4L032-134 30/50 0.12 0.18 0.20 2.50 15 3 1.5 34 MA4L062-134 60/75 0.08 0.11 0.15 2.50 10 4 1.5 33 MADL-011009-01340W 20/35 0.15 0.20 0.23 1.50 10 2 3.0 35 MADL-011010-01340W 30/50 0.15 0.21 0.24 1.50 15 3 3.0 34 MADL-011021-14210G 20/35 0.18 0.23 0.24 2.00 10 2 2.6 x 5.8 35 MADL-011085-14210W 50/75 0.11 0.15 0.12 2.00 11 4 2.6 x 5.8 25 Non Gold Doped Die Carrier 3 C C R 5 CW J J S V 4 5 Lifetime I-Region Contact B 10 V 0 V 10 mA Thermal (10 A) I = +10 mA Thickness Diameter 5 F ( 1 MHz) ( 1 MHz) (500 MHz) Resistance I = -6 mA R Part Number Min./Max. Typ. Max. Typ. Max. Nominal Characteristics V pF pF pF Ohms ns m mils C/W MA4L101-134 100/175 0.07 0.11 0.15 2.00 150 13 3.5 25 MA4L401-134 250/300 0.19 0.22 0.25 1.20 600 25 4.5 16 MADL-000301-01340W 200/300 0.11 0.16 0.20 1.50 350 20 3.0 39 MADL-011052-14280W 20/40 0.16 0.19 0.21 2.0 23 2 2.6 x 5.8 36 MADL-011054-01340W 60/80 0.11 0.15 0.16 1.6 74 4 1.1 38 3. Maximum breakdown voltage is sample tested and guaranteed by design. Exceeding this maximum V value may damage the device. B 4. Junction capacitance is measured at 1 MHz -10 V reverse voltage. C 10 1 MHz represents the microwave C frequency >50 MHz J J at 0 V. 5. Test performed with the chip bonded into a ceramic pill package. For thermal resistance package is mounted to an infinite heatsink. Chip only CW value is approximately 2C/W lower. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: