Silicon PIN Diode Chips PIN Diode Chips Rev. V25 Features Anode Switch & Attenuator Die Extensive Selection of I-Region Lengths Hermetic Glass Passivated Cermachip Oxide Passivated Planar Chips Voltage Ratings to 3000 V Fast Switching Speed Low Loss High Isolation RoHS* Compliant Description MACOM offers a comprehensive line of low capacitance, planar and mesa, silicon PIN diode chips which use ceramic glass and silicon nitride passivation technology. The silicon PIN chip series of devices cover a broad spectrum of performance requirements for control circuit applications. They are available in several choices of I-region lengths Full Area Cathode and have been optimally designed to minimize parametric trade offs when considering low capacitance, low series resistance, and high breakdown voltages. Their small size and low parasitics, make them an ideal choice for 1 Absolute Maximum Ratings broadband, high frequency, micro-strip hybrid T = +25C (Unless otherwise specified) A assemblies. Parameter Absolute Maximum The attenuator line of PIN diode chips are a planar or mesa construction and because of their thicker I-regions and predictable R vs. I characteristics, S Forward Current (I ) Per P/N R vs. I Graph F s they are well suited for low distortion attenuator and switch circuits. Incorporated in the chips Reverse Voltage (V ) Per Specification Table R construction is MACOMs, time proven, hard glass, Cermachip process. The hard glass passivation 175C T C ambient Power Dissipation (W) completely encapsulates the entire PIN junction area Theta resulting in a hermetically sealed chip which has Operating Temperature -55C to +175C been qualified in many military applications. These Cermachip diodes are available in a wide range of voltages, up to 3,000 volts, which are capable of Storage Temperature -55C to +200C controlling kilowatts of RF power. Junction Temperature +175C Many of MACOM s silicon PIN diode chips are also available in several different package styles. Please refer to the Mounting Temperature +320C for 10 seconds Packaged PIN Diode Datasheet for case style availability and electrical specifications located on the MACOM website. 1. Exceeding these limits may cause permanent damage to the Also for high voltage, high power devices refer to chip. MA4PK2000. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: Silicon PIN Diode Chips PIN Diode Chips Rev. V25 Electrical Specifications: T = +25C A Low Capacitance PIN Maximum Characteristics Nominal Characteristics Reverse Reverse Capacitance Series Res. Carrier Recovery I Region 2 3 Part Number Voltage 1 MHz 500 MHz Lifetime Theta 4 Time Length V <10 A C -10 V R 10 mA T R J S L T RR VDC pF s s m C/W MA4P161-134 100 0.10 1.50 150 15 13 65 MA4P203-134 100 0.15 1.50 150 25 13 75 MA4P7493-134 150 0.05 1.80 80 8 19 60 MADP-000165-01340W 200 0.06 2.50 200 20 19 30 MADP-000135-01340W 200 0.15 1.20 440 44 19 30 Attenuator PIN Maximum Characteristics Nominal Characteristics Reverse Capacitance Series Res. Carrier S e r i e s Res. Series Res. I Region 2 3 Part Number Voltage 1 MHz 100 MHz Lifetime 100 MHz 100 MHz Theta Length V <10 A C -100 V R 10 mA T R 10 A R 1 mA R J S L S S V pF s mils C/W DC MA47416-132 200 0.15 6 2 2000 30 4 30 MA47418-134 200 0.15 3 1 500 15 2 25 2. Reverse Voltage (V ) is sourced and the resultant reverse leakage current (I ) is measured to be <10 A. R R 3. Nominal carrier life time (T ) specified at I = +10 mA, I = -6 mA. L F REV 4. Nominal reverse recovery time specified at I = +20 mA, I = -200 mA. F REV 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: