Silicon PIN Chips PIN Diode Chips Rev. V24 Features Anode Switch & Attenuator Die Extensive Selection of I-Region Lengths Hermetic Glass Passivated Cermachip Oxide Passivated Planar Chips Voltage Ratings to 3000 V Fast Switching Speed Low Loss High Isolation RoHS* Compliant Description MACOM offers a comprehensive line of low capacitance, planar and mesa, silicon PIN diode chips which use ceramic glass and silicon nitride passivation technology. The silicon PIN chip series of devices cover a broad spectrum of performance requirements for control circuit applications. They are available in several choices of I-region lengths Full Area Cathode and have been optimally designed to minimize parametric trade offs when considering low capacitance, low series resistance, and high breakdown voltages. Their small size and low 1 Absolute Maximum Ratings parasitics, make them an ideal choice for T = +25C (Unless otherwise specified) broadband, high frequency, micro-strip hybrid A assemblies. Parameter Absolute Maximum The attenuator line of PIN diode chips are a planar or mesa construction and because of their thicker Forward Current (I ) Per P/N R vs. I Graph F s I-regions and predictable R vs. I characteristics, S they are well suited for low distortion attenuator Reverse Voltage (V ) Per Specification Table R and switch circuits. Incorporated in the chips 175C T C ambient construction is MACOMs, time proven, hard glass, Power Dissipation (W) Theta Cermachip process. The hard glass passivation completely encapsulates the entire PIN junction area Operating Temperature -55C to +175C resulting in a hermetically sealed chip which has been qualified in many military applications. These Storage Temperature -55C to +200C Cermachip diodes are available in a wide range of voltages, up to 3,000 volts, which are capable of Junction Temperature +175C controlling kilowatts of RF power. Mounting Temperature +320C for 10 seconds Many of MACOM s silicon PIN diode chips are also available in several different package styles. Please refer to the 1. Exceeding these limits may cause permanent damage to the Packaged PIN Diode Datasheet for case style availability chip. and electrical specifications located on the MACOM website. Also for high voltage, high power devices refer to MA4PK2000. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: Silicon PIN Chips PIN Diode Chips Rev. V24 Electrical Specifications: T = +25C A Low Capacitance PIN Maximum Characteristics Nominal Characteristics Reverse Reverse Capacitance Series Res. Carrier Recovery I Region 2 3 Part Number Voltage 1 MHz 500 MHz Lifetime Theta 4 Time Length V <10 A C -10 V R 10 mA T R J S L T RR VDC pF s s m C/W MA4P161-134 100 0.10 1.50 150 15 13 65 MA4P203-134 100 0.15 1.50 150 25 13 75 MA4P7493-134 150 0.05 1.80 80 8 19 60 MADP-000165-01340W 200 0.06 2.50 200 20 19 30 MADP-000135-01340W 200 0.15 1.20 440 44 19 30 Attenuator PIN Maximum Characteristics Nominal Characteristics Reverse Capacitance Series Res. Carrier Se rie s Res. Series Res. I Region 2 3 Part Number Voltage 1 MHz 100 MHz Lifetime 100 MHz 100 MHz Theta Length V <10 A C -100 V R 10 mA T R 10 A R 1 mA R J S L S S V pF s mils C/W DC MA47416-132 200 0.15 6 2 2000 30 4 30 MA47418-134 200 0.15 3 1 500 15 2 25 2. Reverse Voltage (V ) is sourced and the resultant reverse leakage current (I ) is measured to be <10 A. R R 3. Nominal carrier life time (T ) specified at I = +10 mA, I = -6 mA. L F REV 4. Nominal reverse recovery time specified at I = +20 mA, I = -200 mA. F REV 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: