X-On Electronics has gained recognition as a prominent supplier of MADP-011027-14150T PIN Diodes across the USA, India, Europe, Australia, and various other global locations. MADP-011027-14150T PIN Diodes are a product manufactured by MACOM. We provide cost-effective solutions for PIN Diodes, ensuring timely deliveries around the world.

MADP-011027-14150T MACOM

MADP-011027-14150T electronic component of MACOM
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Part No.MADP-011027-14150T
Manufacturer: MACOM
Category: PIN Diodes
Description: RF Diode PIN - Single 100V 250 mA 3.3 W 6-TDFN (1.5x1.2)
Datasheet: MADP-011027-14150T Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.146 ea
Line Total: USD 3.15 
Availability - 3142
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3142
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 3.146
10 : USD 2.673
100 : USD 2.288
250 : USD 2.079
500 : USD 1.969
1000 : USD 1.881
3000 : USD 1.804
6000 : USD 1.771
9000 : USD 1.749

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Vr - Reverse Voltage
Maximum Diode Capacitance
Maximum Series Resistance @ Maximum IF
If - Forward Current
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Minimum Operating Frequency
Maximum Operating Frequency
Mounting Style
Package / Case
Series
Packaging
Configuration
Frequency Range
Brand
Carrier Life
Maximum Series Resistance Minimum If
Pd - Power Dissipation
Factory Pack Quantity :
Termination Style
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MADP-011027-14150T from our PIN Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MADP-011027-14150T and other electronic components in the PIN Diodes category and beyond.

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MADP-011027-14150T High Power PIN Diode Rev. V1 50 MHz - 12 GHz Features Functional Schematic 3 Terminal LPF Broadband Shunt Structure 50 MHz - 12 GHz Broadband Frequency >100 W Peak Power Handling < 0.1 dB Shunt Insertion Loss >23 dB Shunt Isolation < 45C/W Thermal Resistance Lead-Free 1.5 x 1.2 mm 6-lead DFN Package o RoHS* Compliant and 260 C Reflow Description The MADP-011027 is a lead-free 1.5 x 1.2 mm DFN surface mount plastic packaged that provides both low and high signal frequency operation from 50 MHz to 12 GHz. The higher breakdown voltage and lower thermal resistance of the PIN diode provides peak power handling in excess of 100 W. 3 Pin Configuration This device is ideally suitable for usage in higher incident power switches, phase shifters, attenuators, Pin No. Pin Name Description and limiter microwave circuits over a broad frequency where higher performance surface mount 1 RF RF Input IN diode assemblies are required. 2 GND Ground 3 GND Ground 1,2 Ordering Information 4 GND Ground Part Number Package 5 GND Ground 6 RF RF Output MADP-011027-14150T 3000 piece reel OUT 4 7 Paddle Ground MADP-011027-000SMB sample board 3. M/A-COM Technology Solutions recommends connecting 1. Reference Application Note M513 for reel size information. unused package pins to ground. 2. All RF Sample boards include 5 loose parts. 4. The exposed pad centered on the package bottom must be connected to RF, DC, and thermal ground. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 1 1 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. North America Tel: 800.366.2266 / Fax: 978.366.2266 Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MADP-011027-14150T High Power PIN Diode Rev. V1 50 MHz - 12 GHz Electrical Specifications: T = +25C A Parameter Test Conditions Units Min. Typ. Max. Forward Voltage +50 mA D.C. V 0.7 0.9 1.1 Reverse Leakage Current -100 V D.C. A - 20 -1000 5 Total Capacitance -50 V 1 MHz pF 0.24 0.35 6 Series Resistance +10 mA 1 GHz 1.9 2.6 6 Parallel Resistance -Vdc = -40 V, 100 MHz K 500 +If = 10 mA / -Ir = -6 mA Minority Carrier Lifetime S 1.0 2.0 (50% Control Voltage, 90% Output Voltage) C.W. Thermal Resistance ( Infinite Heat Sink at Thermal IHigh = 4 A, Ilow = 10 mA 10 kHz C/W 45 Ground Plane) 7,8 Power Dissipation ( Infinite Heat Sink at Thermal +If = 50 mA 1 GHz W 3.3 Ground Plane) Insertion Loss F = 1 GHz, -Vdc = -10 V dB -0.1 Isolation F = 1 GHz, +Ibias = +10 mA dB -23 -21 5. Ct (Total Capacitance) = CJ (Junction Capacitance) + Cp (Parasitic Package Capacitance). 6. Rs and Rp are measured on an HP4291A Impedance Analyzer. 7. De-rate power dissipation linearly by -22.2 mW/C to 0 W +175C: Pd (T) = Pd (+25C) - P = Pd (+25) - (22.2 mV/C) (T). 8. PD = Tj / or PD=(IF + IRF) 2 (Rs), where IF is the forward bias DC current and IRF is the forward bias RMS RF current. 9,10 Absolute Maximum Ratings Parameter Absolute Maximum D.C. Forward Voltage 1.2 V Handling Procedures +250 mA Please observe the following precautions to avoid D.C. Forward Current 250 mA damage: D.C. Reverse Voltage -100V Static Sensitivity 11 Junction Temperature +175C These devices are sensitive to electrostatic Operating Temperature -65C to +125C discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should Storage Temperature -65C to +150C be used when handling these Class 2 devices. Re-flow Temperature +260C for 360 seconds 9. Exceeding any one or combination of these limits may cause permanent damage to this device. 10. M/A-COM Technology Solutions does not recommend sustained operation near these survivability limits. 11. Operating at nominal conditions with T +140C will ensure J MTTF > 1 x 10E6 hours. 2 2 2 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. North America Tel: 800.366.2266 / Fax: 978.366.2266 Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Aeroflex Metelics
M/A-COM
M/A-COM / TYCO
M/A-COM Technology Solutions
MA/COM
MACOM
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