MADP-011028-14150T High Power PIN Diode Rev. V3 50 MHz - 12 GHz Features Functional Schematic 3 Terminal LPF Broadband Shunt Structure 50 MHz - 12 GHz Broadband Frequency >100 W Peak Power Handling < 0.1 dB Shunt Insertion Loss RF RF 6 OUT IN 1 >19 dB Shunt Isolation < 35C/W Thermal Resistance Lead-Free 1.5 x 1.2 mm 6-lead TDFN Package o 5 GND GND 2 RoHS* Compliant and 260 C Reflow Description GND 4 GND 3 7 The MADP-011028 is a lead-free 1.5 x 1.2 mm TDFN surface mount plastic packaged that provides both low and high signal frequency operation from 50 MHz to 12 GHz. The higher breakdown voltage and lower thermal resistance of the PIN diode provides peak power handling in excess of 100 W. 3 Pin Configuration This device is ideally suitable for usage in higher incident power switches, phase shifters, attenuators, Pin No. Pin Name Description and limiter microwave circuits over a broad frequency where higher performance surface mount 1 RF RF Input IN diode assemblies are required. 2 GND Ground 3 GND Ground 1,2 Ordering Information 4 GND Ground Part Number Package 5 GND Ground 6 RF RF Output MADP-011028-14150T 3000 piece reel OUT 4 7 Paddle Ground MADP-011028-000SMB Sample board 3. M/A-COM Technology Solutions recommends connecting 1. Reference Application Note M513 for reel size information. unused package pins to ground. 2. All RF Sample boards include 5 loose parts. 4. The exposed pad centered on the package bottom must be connected to RF, DC, and thermal ground. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MADP-011028-14150T High Power PIN Diode Rev. V3 50 MHz - 12 GHz Electrical Specifications: T = +25C A Parameter Test Conditions Units Min. Typ. Max. Forward Voltage +50 mA D.C. V 0.7 0.9 1.1 Reverse Leakage Current -200 V D.C. nA - 20 -1000 5 Total Capacitance -50 V 1 MHz pF 0.24 0.30 6 Series Resistance +10 mA 1 GHz 3.4 4.4 6 Parallel Resistance -Vdc = -40 V, 100 MHz K 500 +If = 10 mA / -Ir = -6 mA Minority Carrier Lifetime s 2.0 3.0 (50% Control Voltage, 90% Output Voltage) C.W. Thermal Resistance ( Infinite Heat Sink at Thermal I High = 4 A, I low = 10 mA 10 kHz C/W 35 Ground Plane) 7,8 Power Dissipation ( Infinite Heat Sink at Thermal +If = 50 mA 1 GHz W 4.3 Ground Plane) Insertion Loss F = 1 GHz, -Vdc = -10 V dB 0.05 Isolation F = 1 GHz, +I bias = +10 mA dB 16.5 18.5 5. Ct ( Total Capacitance ) = CJ ( Junction Capacitance ) + Cp ( Parasitic Package Capacitance ). 6. Rs and Rp are measured on an HP4291A Impedance Analyzer. 7. De-rate power dissipation linearly by -28.6 mW/C to 0 W +175C: Pd (T) = Pd (+ 25C) - P = Pd (+ 25) - (28.6 mV/C) (T). 8. PD = Tj / or PD=(IF + IRF) 2 (Rs), where IF is the forward bias DC current and IRF is the forward bias RMS RF current. 9,10 Absolute Maximum Ratings Parameter Absolute Maximum D.C. Forward Voltage 1.2 V Handling Procedures +250 mA Please observe the following precautions to avoid D.C. Forward Current 250 mA damage: D.C. Reverse Voltage -200V Static Sensitivity Junction Temperature +175C These devices are sensitive to electrostatic Operating Temperature -65C to +125C discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should Storage Temperature -65C to +150C be used when handling these Class 1B devices. Re-flow Temperature +260C for 360 seconds 9. Exceeding any one or combination of these limits may cause permanent damage to this device. 10. M/A-COM Technology Solutions does not recommend sustained operation near these survivability limits. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: