MADP-011037-13900T High Power PIN Diode Rev. V2 50 MHz - 2 GHz Functional Schematic Features >125 W CW Incident Power Handling 1 GHz GND RF GND N/C OUT <0.2 dB Insertion Loss 1 GHz >15 dB Isolation 1 GHz 16 14 13 15 Lead-Free 3 mm 16-lead HQFN Package Halogen-Free Green Mold Compound 12 GND GND 1 RoHS* Compliant and 260C Reflow Compatible 11 N/C 2 N/C Description The MADP-011037 is a high power PIN diode 3 10 N/C N/C assembled in a lead-free 3 mm 16-lead HQFN plastic package. This series device provides GND GND 4 9 exceptional switch or attenuator performance from 50 MHz to 2 GHz. 5 6 7 8 This compact device is ideally suitable for higher power switch and attenuator applications from HF GND RF GND N/C IN through L band, where higher peak and CW power, 3 lower loss, and higher linearity performance surface Pin Configuration mount diode assemblies are required. Pin No. Pin Name Description 1 GND Ground 2 N/C Connect to Ground 3 N/C Connect to Ground 4 GND Ground 5 GND Ground 1,2 Ordering Information 6 RF Anode IN Part Number Package 7 GND Ground MADP-011037-13900T 3000 piece reel 8 N/C Connect to Ground 9 GND Ground MADP-011037-000SMB Sample Board 10 N/C Connect to Ground 1. Reference Application Note M513 for reel size information. 2. All sample boards include 5 loose parts. 11 N/C Connect to Ground 12 GND Ground 13 N/C Connect to Ground 14 GND Ground 15 RF Cathode OUT 16 GND Ground *Restrictions on Hazardous Substances, 4 17 Paddle Ground European Union Directive 2011/65/EU. 3. MACOM recommends connecting unused package pins to ground. 4. The exposed pad centered on the package bottom must be connected to RF,DC and thermal ground. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MADP-011037-13900T High Power PIN Diode Rev. V2 50 MHz - 2 GHz Electrical Specifications: Freq. = 1250 MHz, T = 25C, Z = 50 (unless otherwise noted) A 0 Parameter Test Conditions Units Min. Typ. Max. I = 10 mA 0.17 F Insertion Loss I = 25 mA dB 0.13 0.3 F I = 50 mA 0.11 F I = 10 mA 22 F Input Return Loss I = 25 mA dB 22 F I = 50 mA 22 F V = 0 V 14 R Isolation V = 20 V dB 12 14 R V = 50 V 14 R CW Incident Power 1 GHz, CW + 50 mA dBm 52 +I = 10 mA / I = -6 mA F R Minority Carrier Lifetime s 1.0 (50% Control Voltage, 90% Output Voltage) (Infinite Heat Sink at Thermal Ground Plane) CW Thermal Resistance ( ) C/W 30 JC I High = 4 A, I low = 10 mA 10 kHz (Infinite Heat Sink at Thermal Ground Plane) Power Dissipation W 5 +I = 50 mA 1 GHz F Forward Voltage +50 mA DC V 0.9 Total Capacitance -50 V 1 GHz pF 0.30 Reverse Leakage Current -200 V nA -20 5,6 Absolute Maximum Ratings Parameter Absolute Maximum 7 CW Incident Power +51 dBm +50 mA, 1 GHz +85C DC Forward Voltage 1.2 V +250 mA DC Forward Current 250 mA DC Reverse Voltage -400V 8,9 Junction Temperature +175C Operating Temperature -65C to +125C Storage Temperature -65C to +150C 5. Exceeding any one or combination of these limits may cause permanent damage to this device. 6. MACOM does not recommend sustained operation near these survivability limits. 7. Incident Power measured with Source and Load VSWR < 1.2:1. 8. Operating at nominal conditions with T +175C will ensure J 6 MTTF > 1 x 10 hours. 9. Junction Temperature (T ) = T + ( ) * (P ) J A JC D 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: