MADP-011104 High Power Shunt PIN Diode Rev. V1 50 MHz - 5 GHz Features Functional Schematic 350 W CW Incident Power Handling 3 GHz 0.15 dB Insertion Loss 3 GHz N/C N/C N/C 29 dB Isolation 3 GHz Lead-Free 3 mm 12-lead QFN Package 12 11 10 Halogen-Free Green Mold Compound RoHS* Compliant RF1 1 9 RF2 Description The MADP-011104 is a high-power PIN diode RF1 RF2 2 8 assembled in a lead-free 3 mm 12-lead QFN plastic package. This shunt device provides exceptional N/C switch or attenuator performance from 50 MHz to 5 N/C 3 7 GHz. 4 5 6 This compact device is ideally suited to switch and attenuator applications from HF through S band, where higher peak and CW power, lower loss, and N/C N/C N/C higher linearity surface-mount diode assemblies are required. 3 Pin Configuration 1,2 Ordering Information Pin Function Part Number Package 1, 2 RF1 MADP-011104-TR500 500 Piece Tape and Reel 3 - 7, 10 - 12 N/C MADP-011104-TR3000 3000 Piece Tape and Reel 8, 9 RF2 4 MADP-011104-000SMB Sample Board Paddle Ground 3. MACOM recommends connecting unused package pins to 1. Reference Application Note M513 for reel size information ground. 2. All sample boards include 5 loose parts. 4. The exposed pad centered on the package bottom must be connected to RF, DC and thermal ground. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MADP-011104 High Power Shunt PIN Diode Rev. V1 50 MHz - 5 GHz Electrical Specifications: T = +25C, Z = 50 A 0 Parameter Test Conditions Units Min. Typ. Max. Insertion Loss -40 V, 3 GHz dB 0.15 Isolation +100 mA, 3 GHz dB 27 29 Return Loss -40 V, 3 GHz dB 21 Forward Voltage, V +100 mA V 0.91 F Reverse Leakage, I -800 V nA 6 R -40 V, 15 MHz 0.45 Shunt Capacitance, C pF T -40 V, 3 GHz 0.40 +10 mA, 3 GHz 2.21 Shunt Resistance, R +50 mA, 3 GHz ohm 1.08 S +100 mA, 3 GHz 0.95 Thermal Resistance, Rth +85C, 3 GHz C/W 10 JC Carrier Lifetime, TL I = +10 mA, I = -6 mA s 2 F R 5,6,7 Handling Procedures Absolute Maximum Ratings Please observe the following precautions to avoid Parameter Absolute Maximum damage: 8 CW Incident Power 350 W -40 V, 3 GHz +85C Static Sensitivity 8 CW Incident Power These electronic devices are sensitive to 45 W +100 mA, 3 GHz +85C electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques DC Forward Current 250 mA should be used when handling these HBM Class 1C and CDM Class C5 devices. DC Reverse Voltage -800 V 8 Junction Temperature +175C Operating Temperature -40C to +85C Storage Temperature -55C to +150C 5. Exceeding any one or combination of these limits may cause permanent damage to this device. 6. MACOM does not recommend sustained operation near these survivability limits. 7. Power levels specified are for cold switching. MACOM recommends cold switching only. 8. Operating at nominal conditions with T +175C will ensure J 6 MTTF > 1 x 10 hours. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: