MADP-042xx8-1306x Series TM SURMOUNT 8 M PIN Diodes Rev. V3 RoHS Compliant 1,2,3 Features Surmount Chip Surface Mount No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch Protection Low Parasitic Capacitance and Inductance High Average and Peak Power Handling RoHS Compliant Description This device is a silicon, glass PIN diode surmount chip fabricated with MACOMs patented HMIC process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The G diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls D E F electrically conductive. Selective backside metallization is applied producing a surface mount device. This vertical topology provides for exceptional heat transfer. The topside is fully encapsulated with silicon nitride and has an Surmount Chip Dimensions additional polymer layer for scratch and impact protection. These protective coatings prevent INCHES MM DIM damage to the junction and the anode air-bridge MIN. MAX. MIN. MAX. during handling and assembly. A 0.040 0.042 1.025 1.075 Applications B 0.021 0.023 0.525 0.575 These packageless devices are suitable for C 0.004 0.008 0.102 0.203 moderate incident power applications, 10 W/CW or where the peak power is 52 W, pulse width is D 0.013 0.015 0.325 0.375 1 s, and duty cycle is 0.01%. Their low parasitic inductance, 0.4 nH, and excellent RC constant, E 0.011 0.013 0.275 0.325 make these devices a superior choice for higher F 0.013 0.015 0.325 0.375 frequency switch elements when compared to their plastic package counterparts. G 0.019 0.021 0.475 0.525 1. Backside metal: 0.1 m thick. 2. Yellow hatched areas indicate backside ohmic gold contacts. 3. All devices have the same outline dimensions (A to G). 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MADP-042xx8-1306x Series TM SURMOUNT 8 M PIN Diodes Rev. V3 RoHS Compliant Electrical Specifications T = +25C A MADP-042308 MADP-042508 Parameter Symbol Conditions Units Typ. Max. Typ. Max. -10 V, 1 MHz 0.10 0.20 0.18 0.30 -10 V, 1 GHz 0.10 0.19 4,6 Capacitance C pF T -40 V, 1 MHz 0.09 0.20 0.18 0.30 -40 V, 1 GHz 0.10 0.18 20 mA, 1 GHz 1.38 0.97 5,6 Resistance R S 50 mA, 1 GHz 1.18 0.87 Forward Voltage V +10 mA V 0.85 1.00 0.82 1.00 F Reverse Leakage Current I -100 V A 10 10 R Input Third Order F1= 1000 MHz, F2 = 1010 MHz, IIP3 dBm 73 77 Intercept Point P = +20 dBm, I = +20 mA IN BIAS 7 CW Thermal Resistance C/W 145 115 +10 mA / -6 mA Lifetime T ns 280 310 L (50% - 90% V) MADP-042408 MADP-042908 Parameter Symbol Conditions Units Typ. Max. Typ. Max. -10 V, 1 MHz 0.38 0.50 0.05 0.15 -10 V, 1 GHz 0.39 0.05 4,6 Capacitance C pF T -40 V, 1 MHz 0.36 0.50 0.04 0.15 -40 V, 1 GHz 0.37 0.05 20 mA, 1 GHz 0.67 3.63 5,6 Resistance R S 50 mA, 1 GHz 0.61 3.02 Forward Voltage V +10 mA V 0.80 1.00 0.91 1.00 F Reverse Leakage Current I -100 V A 10 10 R Input Third Order F1= 1000 MHz, F2 = 1010 MHz, IIP3 dBm 81 66 Intercept Point P = +20 dBm, I = +20 mA IN BIAS 7 CW Thermal Resistance C/W 100 185 +10 mA / -6 mA Lifetime T ns 380 230 L (50% - 90% V) 4. Total capacitance (C ) is equivalent to the sum of junction capacitance (C ) and parasitic capacitance (C ). T J PAR 5. Series resistance (R ) is equivalent to the total diode resistance: R = R (Junction Resistance) + R (Ohmic Resistance). S S J C 6. R and C are measured on an HP4291A Impedance Analyzer with die mounted in an ODS-1134 package. S T 7. Theta () is measured with the die mounted in an ODS-1134 package. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: