MADP-042XX5-13060 Series TM SURMOUNT PIN Diodes: M/A-COM Products Rev. V5 RoHS Features Surface Mount No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch Protection Low Parasitic Capacitance and Inductance High Average and Peak Power Handling RoHS Compliant Description This device is a silicon, glass PIN diode surmount chip TM G fabricated with M/A-COMs patented HMIC process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and connections to the backside of the D E F device are facilitated by making the pedestal sidewalls electrically conductive. Selective backside metallization is applied producing a surface mount device. This vertical topology provides for exceptional heat transfer. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly. Applications INCHES MM These packageless devices are suitable for moderate DIM MIN MAX MIN MAX incident power applications, 10W/C.W. or where the peak power is 50W, pulse width is 1S, and duty cycle A 0.040 0.042 1.025 1.075 is 0.01%. Their low parasitic inductance, 0.4 nH, and B 0.021 0.023 0.525 0.575 excellent RC constant, make these devices a superior choice for higher frequency switch elements when C 0.004 0.008 0.102 0.203 compared to their plastic package counterparts. D 0.013 0.015 0.325 0.375 E 0.011 0.013 0.275 0.325 1 Absolute Maximum Ratings T = +25C AMB F 0.013 0.015 0.325 0.375 (unless otherwise specified) G 0.019 0.021 0.475 0.525 Parameter Absolute Maximum MADP-042-13060 305 405 505 905 Notes: 1. Backside metal: 0.1 M thick. C.W. Incident Power dBm 40 44 43 35 2. Yellow hatched areas indicate backside ohmic gold contacts. 3. All devices have the same outline dimensions ( A to G). Forward Current 250 mA Reverse Voltage -80 V Operating Temperature -55C to +125C Storage Temperature -55C to +150C Junction Temperature +175C Mounting Temperature +280C for 10 seconds 1. Exceeding these limits may cause permanent damage. ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop- Visit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice. MADP-042XX5-13060 Series TM SURMOUNT PIN Diodes: M/A-COM Products Rev. V5 RoHS Electrical Specifications T = + 25 C AMB Min Typ Max Min Typ Max Parameter Symbol Conditions Units MADP-042305-13060 MADP-042505-13060 1,3 Capacitance C - 10V, 1 MHz 1 pF 0.14 0.22 0.28 0.40 T 1,3 Capacitance C - 10 V, 1 GHz 1,3 pF 0.15 0.28 T 1,3 Capacitance C - 40 V, 1 MHz 1 pF 0.13 0.22 0.27 0.40 T 1,3 Capacitance C - 40 V, 1 GHz 1,3 pF 0.14 0.27 T 2,3 Resistance R + 20 mA, 1 GHz 2,3 W 1.32 0.83 S 2,3 Resistance R + 50 mA, 1 GHz 2,3 W 1.18 0.76 S Forward Voltage V + 10 mA V 0.87 1.00 0.84 1.00 F Reverse Leakage I -80V uA 10 10 R Current F 1= 1000 MHz Input Third Order F2 = 1010 MHz 3 IIP dBm 72 76 Intercept Point Input Power = +20 dBm I bias = + 20 mA C.W. Thermal C/W 145 115 Resistance +10 mA / -6 mA Lifetime T nS 180 210 L ( 50% - 90% V ) Min Typ Max Min Typ Max Parameter Symbol Conditions Units MADP-042905-13060 MADP-042405-13060 1,3 Capacitance C - 10 V, 1 MHz 1 pF 0.61 0.75 0.06 0.18 T 1,3 Capacitance C - 10 V, 1 GHz 1,3 pF 0.61 0.06 T 1,3 Capacitance C - 40 V, 1 MHz 1 pF 0.57 0.75 0.06 0.18 T 1,3 Capacitance C - 40 V, 1 GHz 1,3 pF 0.58 0.06 T 2,3 Resistance R + 20 mA, 1 GHz 2,3 W 0.62 3.14 S 2,3 Resistance R + 50 mA, 1 GHz 2,3 W 0.58 2.60 S Forward Voltage V + 10 mA V 0.82 1.00 0.93 1.00 F Reverse Leakage I -80V uA 10 10 R Current F 1= 1000 MHz Input Third Order F2 = 1010 MHz 3 IIP dBm 80 65 Intercept Point Input Power = +20 dBm I bias = + 20 mA C.W. Thermal 4 C/W 100 185 Resistance +10 mA / -6 mA Lifetime T nS 255 140 L ( 50% - 90% V ) 1. Total capacitance, C , is equivalent to the sum of junction capacitance ,C , and parasitic capacitance, Cpar. T J 2. Series resistance R is equivalent to the total diode resistance : R = R ( Junction Resistance) + R ( Ohmic Resistance) S S J C 3. R and C are measured on an HP4291A Impedance Analyzer with die mounted in an ODS-1134 package. S T 4. Theta ( ) is measured with the die mounted in an ODS-1134 package. Specifications Subject to Change Without Notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop- Visit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice.