MADR-009150 20 - 50 V Driver for High Power PIN Diode Switches Rev. V2 Features Functional Schematic 20 V to 50 V Back Bias GND N/C N/C B 200 mA Sinking Current 16 15 14 13 100 mA Sourcing Current Propagation Delay <200 ns Driving 100 pF Capacitive Load N/C 1 12 N/C Low Quiescent Current Level Inverter Shifter 3.3 V TTL Logic Control 3 mm 16-Lead PQFN Package C 2 11 5 V DD Halogen-Free Green Mold Compound RoHS* Compliant V 3 8 10 N/C CC TTL Level Description Buffer Shifter The MADR-009150 switch driver is designed to work N/C 9 4 N/C with MACOMs high power and high voltage PIN diode switches. This driver has complementary 5 6 7 8 outputs which can provide up to 200 mA bias current GND N/C N/C A to a SPDT PIN diode switch. The back bias voltage can be selected to be any voltage between 20 V to Pin Configuration 50 V. This switch driver can be easily controlled by standard 3.3 V TTL logic. With low quiescent current, this driver has a typical delay of <200 ns 2 1,4 N/C No Connection when driving 100 pF capacitive load. 2 C Logic Control Input This driver is packaged in a lead free 3 mm 16-lead PQFN package and is available in tape and reel 3 V Logic Bias CC packaging for high volume applications. 5 GND Ground 6,7,9,10, 3 N/C No Connection 12,14,15 8 A Output A 1 Ordering Information 11 V High Voltage Bias DD 13 B Output B MADR-009150 bulk 16 GND Ground 4 MADR-009150-TR1000 1000 Piece Reel 17 Paddle Ground 1. Reference Application Note M513 for reel size information. 2. Pin 1 and Pin 4 (N/C) can be grounded if desired. 3. Pins 6, 7, 9, 10, 12, 14 and 15 (N/C) should be isolated on the PCB to prevent voltage difference between adjacent pins from exceeding IPC 2221 standard. For V peak voltage less than DD 30 V, these pins can be grounded if desired. 4. The exposed pad centered on the package bottom must be connected to the RF, DC and thermal ground. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU 1 11 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MADR-009150 20 - 50 V Driver for High Power PIN Diode Switches Rev. V2 Electrical Specifications: T = 25C, V = 3.3 V, V = 50 V A CC DD V Quiescent Current C = 3.3 V A 50 CC V Quiescent Current C = 0 V or 3.3 V mA 0.5 DD 5 Control Input Leakage Current C = 3.3 V A 25 RPULL-UP, Output Pull-up On Resistance 100 mA Load 19 RPULL-DOWN, Output Pull-down On Resistance 200 mA Load 6 6 Switching Speed Driving 100 pF Capacitors T 50% control to 90% Voltage 120 ON T 50% control to 10% Voltage ns 140 OFF T 10% to 90% Voltage 30 RISE T 90% to 10% Voltage 30 FALL 7 Switching Speed Driving the MASW-000936 Switch T 50% control to 90% RF 320 ON T 50% control to 10% RF ns 300 OFF T 50% control to 90% RF 420 RISE T 50% control to 10% RF 160 FALL Driver Power Up Time Note 8 s 30 Driver Power Down Time Note 9 s 500 5. This leakage current is due to an active pull-down NMOS FET at the control input. 6. During this test, there was 100 pF capacitive load at each output (no current load). 7. MACOM MASW-000936 is a 120 W SPDT PIN diode switch requiring 100 mA current to bias series and shunt diodes. These results were measured with a 2.7 GHz, 9.5 dBm sine wave signal. 8. The driver power up time is the time needed for the internal bias voltages to reach 90% of their steady state value during power up. 9. The driver power down time is the time needed for the internal voltages to discharge to 10% of their steady state value during power down. 2 22 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: