MPKB2CB100U60 Magnachip

MPKB2CA/CB 100U60 600V FRD Module MPKB2CA/CB100U60 600V FRD Module General Description Features Ultra-FRD module devices are optimized to reduce losses Repetitive Reverse Voltage : V = 600V RRM and EMI/RFI in high frequency power conditioning electrical Low Forward Voltage : V (typ.) = 1.45V F systems. Average Forward Current : I (Av.)=100A T =100 F C These diode modules are ideally suited for power converters, Ultra-Fast Reverse Recovery Time : t (typ.) = 35ns rr motors drives and other applications where switching losses Extensive Characterization of Recovery Parameters are significant portion of the total losses. Reduced EMI and RFI Isolation Type Package Applications High Speed & High Power converters, Welders Various Switching and Telecommunication Power Supply Ordering Information Product MPKB2CA100U60 MPKB2CB100U60 Name Center Common Center Common & N-type & P-type Optional Information E301932 5DM-1 o Absolute Maximum Ratings Tc = 25 C (Per Leg) Characteristics Conditions Symbol Rating Unit Repetitive Peak Reverse Voltage V 600 V RRM Reverse DC Voltage V 480 V R(DC) o T =25 C 200 A C Average Forward Current Resistive Load I F(AV) o T =100 C 100 A C One Half Cycle at 60Hz, Surge(non-repetitive) Forward Current I 1400 A FSM Peak Value Value for One Cycle Current, 2 2 3 2 I t for Fusing I t 16.2* 10 A s t = 8.3ms, T= 25 Start w j Junction Temperature T -40 ~ 150 J Maximum Power Dissipation PD 360 W Isolation Voltage AC 1 minutes V 2500 V isol Storage Temperature T -40 ~ 150 stg Mounting Torque(M6) - 4.0 N.m Terminal Torque(M5) Typical Including Screws - 2.0 N.m Weight - 120 g 1 Mar. 2013. Version 2.1 MagnaChip Semiconductor Ltd. MPKB2CA/CB 100U60 600V FRD Module o Electrical Characteristics Tc = 25 C(unless otherwise specified) Characteristics Conditions Symbol Min. Typ. Max. Unit Cathode Anode Breakdown Voltage I =100uA V 600 - - V R R - 1.45 1.8 T =25 C Diode Maximum Forward Voltage I =100A V V F FM T =100 - 1.35 - C T =100, c Diode Peak ReverseRecovery Current I - - 1.0 mA TC=100 RRM V applied RRM I =1A,V =30V F R Diode Reverse Recovery Time T =25 t - 35 50 ns C rr di/dt = -200A/uS - 90 130 T =25 C I =100A,V =300V F R Diode Reverse Recovery Time t ns rr di/dt = -200A/uS T =100 - 160 - C Thermal Characteristics Characteristics Conditions Symbol Min. Typ. Max. Unit Thermal Resistance(Isolation Type) Junction to Case Rth(j-c) - - 0.34 /W 2 Mar. 2013. Version 2.1 MagnaChip Semiconductor Ltd.