2N1613 www.centralsemi.com SILICON DESCRIPTION: NPN TRANSISTOR The CENTRAL SEMICONDUCTOR 2N1613 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) A SYMBOL UNITS Collector-Base Voltage V 75 V CBO Collector-Emitter Voltage V 50 V CER Emitter-Base Voltage V 7.0 V EBO Continuous Collector Current I 500 mA C Power Dissipation (T=25C) P 3.0 W C D Power Dissipation P 0.8 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=60V 10 nA CBO CB I V=5.0V 10 nA EBO EB BV I=100A 75 V CBO C BV I =10mA, R=10 50 V CER C BE BV I=100A 7.0 V EBO E V I =150mA, I=15mA 1.5 V CE(SAT) C B V I =150mA, I=15mA 1.3 V BE(SAT) C B h V =10V, I=100A 20 FE CE C h V =10V, I=10mA 35 FE CE C h V =10V, I=150mA 40 120 FE CE C h V =10V, I=500mA 20 FE CE C f V =10V, I =50mA, f=20MHz 60 MHz T CE C C V =10V, I =0, f=100kHz 25 pF ob CB E C V =0.5V, I =0, f=100kHz 80 pF ib EB C N V =10V, I =300A, f=1.0kHz 12 dB F CE C R1 (23-April 2013)2N1613 SILICON NPN TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (23-April 2013) www.centralsemi.com