X-On Electronics has gained recognition as a prominent supplier of 2N2219 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N2219 Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N2219 Microchip

2N2219 electronic component of Microchip
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See Product Specifications
Part No.2N2219
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Small-Signal BJT
Datasheet: 2N2219 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3: USD 7.1846 ea
Line Total: USD 21.55 
Availability - 0
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 7.4925
25 : USD 4.4928

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3
Multiples : 1
3 : USD 7.1846
25 : USD 4.3082

   
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RoHS - XON
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We are delighted to provide the 2N2219 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N2219 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N2219 2N2219A www.centralsemi.com SILICON DESCRIPTION: NPN TRANSISTORS The CENTRAL SEMICONDUCTOR 2N2219 and 2N2219A are silicon NPN transistors manufactured by the epitaxial planar process, and designed for small signal general purpose and switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) A SYMBOL 2N2219 2N2219A UNITS Collector-Base Voltage V 60 75 V CBO Collector-Emitter Voltage V 30 40 V CEO Emitter-Base Voltage V 5.0 6.0 V EBO Continuous Collector Current I 800 mA C Power Dissipation P 800 mW D Power Dissipation (T=25C) P 3.0 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg ELECTRICAL CHARACTERISTICS: (T =25C) 2N2219 2N2219A A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=50V - 10 - - nA CBO CB I V=60V - - - 10 nA CBO CB I V =60V, V=3.0V - - - 10 nA CEV CE EB I V=3.0V - 10 - 10 nA EBO EB BV I=10A 60 - 75 - V CBO C BV I=10mA 30 - 40 - V CEO C BV I=10A 5.0 - 6.0 - V EBO E V I =150mA, I=15mA - 0.4 - 0.3 V CE(SAT) C B V I =500mA, I=50mA - 1.6 - 1.0 V CE(SAT) C B V I =150mA, I=15mA - 1.3 - 1.2 V BE(SAT) C B V I =500mA, I=50mA - 2.6 - 2.0 V BE(SAT) C B h V =10V, I=100A 35 - 35 - FE CE C h V =10V, I=1.0mA 50 - 50 - FE CE C h V =10V, I=10mA 75 - 75 - FE CE C h V =10V, I=150mA 100 300 100 300 FE CE C h V =1.0V, I=150mA 50 - 50 - FE CE C h V =10V, I=500mA 30 - - - FE CE C h V =10V, I=500mA - - 40 - FE CE C R1 (31-July 2013)2N2219 2N2219A SILICON NPN TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C) 2N2219 2N2219A A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS f V =20V, I=20mA 250 - 300 - MHz T CE C C V=10V, f=100kHz - 8.0 - 8.0 pF ob CB t V =30V, I =150mA, I=15mA - 35 - 35 ns on CC C B t V =30V, I =150mA, I =I=15mA - 285 - 285 ns off CC C B1 B2 TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (31-July 2013) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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