TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/376
DEVICES LEVELS
2N2484UA JAN
2N2484UB JANTX
2N2484UBC * JANTXV
JANS
* Available to JANS quality level only.
ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted)
C
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage V 60 Vdc
CEO
Collector-Base Voltage V 60 Vdc
CBO
Emitter-Base Voltage V 6.0 Vdc
EBO
Collector Current I 50 mAdc
C
(1)
Total Power Dissipation @ T = +25C P 360 mW
TO-18 (TO-206AA)
A T
2N2484
Operating & Storage Junction Temperature Range T , T -65 to +200 C
J stg
THERMAL CHARACTERISTICS
Parameters / Test Conditions Symbol Value Unit
Thermal Resistance, Ambient-to-Case
2N2484 325
R C/W
JA
2N2484UA 275
2N2484UB, UBC 350
1. See 19500/376 for Thermal Performance Curves.
2N2484UA
ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted)
A
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
V 60 Vdc
(BR)CEO
I = 10mAdc
C
Collector-Emitter Cutoff Current
I 5.0 Adc
CES
V = 45Vdc
CE
2N2484UB, UBC
Collector-Base Cutoff Current
(UBC = Ceramic Lid Version)
5.0 Adc
V = 45Vdc I
CB CBO
10
Adc
V = 60Vdc
CB
Collector-Emitter Cutoff Current
I 2.0 Adc
CEO
V = 5.0Vdc
CE
T4-LDS-0058 Rev. 1 (080853) Page 1 of 2
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/376
ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted)
A
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERISTICS
Emitter-Base Cutoff Current
V = 5.0Vdc 2.0
I Adc
EB EBO
V = 6.0Vdc 10
EB Adc
(2)
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I = 1.0Adc, V = 5.0Vdc 45
C CE
200 500
I = 10 Adc, V = 5.0Vdc
C CE
225 675
I = 100Adc, V = 5.0Vdc
C CE h
FE
250 800
I = 500Adc, V = 5.0Vdc
C CE
250 800
I = 1.0mAdc, V = 5.0Vdc
C CE
225 800
I = 10mAdc, V = 5.0Vdc
C CE
Collector-Emitter Saturation Voltage
V 0.3 Vdc
CE(sat)
I = 1.0mAdc, I = 100Adc
C B
Base-Emitter Voltage
V 0.5 0.7 Vdc
BE(ON)
V = 5.0Vdc, I = 100Adc
CE C
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Forward Current Transfer Ratio
I = 50 Adc, V = 5.0Vdc, f = 5.0MHz 3.0
|h |
C CE fe
2.0 0.7
I = 500Adc, V = 5.0Vdc, f = 30MHz
C CE
Open Circuit Output Admittance
h 40 mhos
oe
I = 1.0mAdc, V = 5.0Vdc, f = 1.0kHz
C CE
Open Circuit Reverse-Voltage Transfer Ratio
-4
h 8.0 x 10
re
I = 1.0mAdc, V = 5.0Vdc, f = 1.0kHz
C CE
Input Impedance
h 3.5 24 k
je
I = 1.0mAdc, V = 5.0Vdc, f = 1.0kHz
C CE
Small-Signal Short-Circuit Forward Current Transfer Ratio
h 250 900
fe
I = 1.0mAdc, V = 5.0Vdc, f = 1.0kHz
C CE
Output Capacitance
C 5.0 pF
obo
V = 5.0Vdc, I = 0, 100kHz f 1.0MHz
CB E
Input Capacitance
C 6.0 pF
ibo
V = 0.5Vdc, I = 0, 100kHz f 1.0MHz
EB C
(2) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%.
T4-LDS-0058 Rev. 1 (080853) Page 2 of 2