X-On Electronics has gained recognition as a prominent supplier of 2N2605 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N2605 Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N2605 Microchip

2N2605 electronic component of Microchip
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Part No.2N2605
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Trans GP BJT PNP 60V 0.03A 3-Pin TO-46
Datasheet: 2N2605 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.3148 ea
Line Total: USD 2.31 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 2.3148

0
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 2.5531

   
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RoHS - XON
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We are delighted to provide the 2N2605 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N2605 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354 DEVICES LEVELS 2N2604 2N2604UB JAN 2N2605 2N2605UB JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted) C Parameters / Test Conditions Symbol 2N2604 2N2605 Unit Collector-Base Voltage V 80 70 Vdc CBO Collector-Emitter Voltage V 60 Vdc CEO Emitter-Base Voltage V 6.0 Vdc EBO Collector Current I 30 mAdc C (1) Total Power Dissipation T = +25C P 400 mW/C A T Operating & Storage Junction Temperature Range T , T -65 to +200 C J stg THERMAL CHARACTERISTICS TO-46 (TO-206AB) Parameters / Test Conditions Symbol Max. Unit Thermal Resistance, Junction-to-Ambient 437 R C/mW JA UB 275 Note: 1/ Consult 19500/354 for thermal curves ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Base Cutoff Current V = 80V dc 2N2604, UB 10.0 uAdc CB V = 70V dc 2N2605, UB 10.0 nAdc CB I CBO V = 50V dc 2N2604, 2N2605, UB 10.0 uAdc CB UB Package V = 50V dc, T = +150C 2N2604, 2N2605, UB 5.0 uAdc CB A Collector-Emitter Breakdown Current V 60 Vdc (BR)CEO I = 10mAdc C Emitter-Base Cutoff Current 10.0 uAdc V = 6.0Vdc I EB EBO 2.0 Adc V = 5.0Vdc EB Collector-Emitter Cutoff Current I 10 Adc CES V = 50Vdc CE T4-LDS-0092 Rev. 2 (101320) Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) (CONT.) A Parameters / Test Conditions Symbol Min. Max. Unit (2) ON CHARACTERTICS Forward-Current Transfer Ratio 2N2604, UB 40 120 I = 10 Adc, V = 5.0Vdc C CE 2N2605, UB 100 300 2N2604, UB 60 180 I = 500 Adc, V = 5.0Vdc C CE 2N2605, UB 150 450 h FE I = 10mAdc, V = 5.0Vdc 2N2604, UB 40 160 C CE 2N2605, UB 100 400 I = 10mAdc, V = 5.0Vdc, T = -55C 2N2604, UB 15 C CE A 2N2605, UB 30 Collector-Emitter Saturation Voltage 0.3 I = 10mAdc, I = 500 Adc V Vdc CE(sat) C B Base-Emitter Saturation Voltage V Vdc I = 10mA, I = 500 Adc BE(sat) 0.7 0.9 C B DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Small-Signal Short-Circuit Input Impedance I = 1.0mAdc, V = 5.0Vdc, f = 1.0kHz 2N2604, UB 1.0 10 C CB h k ie 2N2605, UB 2.0 20 Small-Signal Open-Circuit Forward Current Output Admittance I = 1.0mAdc, V = 5.0Vdc, f = 1.0kHz 2N2604, UB 40 C CE h mhos oe 2N2605, UB 60 Small-Signal Short-Circuit Forward Current Transfer Ratio I = 1.0mAdc, V = 5.0Vdc, f = 1.0kHz 2N2604, UB 60 180 C CE h fe 2N2605, UB 150 450 Magnitude of Small-Signal Forward Current Transfer Ratio h I = 0.5mAdc, V = 5.0Vdc, f = 30MHz fe 1.0 8.0 C CE Output Capacitance 6.0 V = 5.0Vdc, I = 0, 100 kHz f 1.0MHz CB E C pF obo Noise Figure F 5.0 V = 5.0Vdc, I = 10 Adc, R = 10k , f = 100Hz CE C g 1 F 3.0 dB V = 5.0Vdc, I = 10 Adc, R = 10k , f = 1.0kHz 2 CE C g F 3.0 3 V = 5.0Vdc, I = 10 Adc, R = 10k , f = 10kHz CE C g (2) Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% T4-LDS-0092 Rev. 2 (101320) Page 2 of 4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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