X-On Electronics has gained recognition as a prominent supplier of 2N2605 bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. 2N2605 bipolar transistors - bjt are a product manufactured by Microchip. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

2N2605 Microchip

2N2605 electronic component of Microchip
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Part No.2N2605
Manufacturer: Microchip
Category:Bipolar Transistors - BJT
Description: Trans GP BJT PNP 60V 0.03A 3-Pin TO-46
Datasheet: 2N2605 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.3883 ea
Line Total: USD 2.39

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 2.3883

0 - WHS 2


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 2.6342

     
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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354 DEVICES LEVELS 2N2604 2N2604UB JAN 2N2605 2N2605UB JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted) C Parameters / Test Conditions Symbol 2N2604 2N2605 Unit Collector-Base Voltage V 80 70 Vdc CBO Collector-Emitter Voltage V 60 Vdc CEO Emitter-Base Voltage V 6.0 Vdc EBO Collector Current I 30 mAdc C (1) Total Power Dissipation T = +25C P 400 mW/C A T Operating & Storage Junction Temperature Range T , T -65 to +200 C J stg THERMAL CHARACTERISTICS TO-46 (TO-206AB) Parameters / Test Conditions Symbol Max. Unit Thermal Resistance, Junction-to-Ambient 437 R C/mW JA UB 275 Note: 1/ Consult 19500/354 for thermal curves ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Base Cutoff Current V = 80V dc 2N2604, UB 10.0 uAdc CB V = 70V dc 2N2605, UB 10.0 nAdc CB I CBO V = 50V dc 2N2604, 2N2605, UB 10.0 uAdc CB UB Package V = 50V dc, T = +150C 2N2604, 2N2605, UB 5.0 uAdc CB A Collector-Emitter Breakdown Current V 60 Vdc (BR)CEO I = 10mAdc C Emitter-Base Cutoff Current 10.0 uAdc V = 6.0Vdc I EB EBO 2.0 Adc V = 5.0Vdc EB Collector-Emitter Cutoff Current I 10 Adc CES V = 50Vdc CE T4-LDS-0092 Rev. 2 (101320) Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) (CONT.) A Parameters / Test Conditions Symbol Min. Max. Unit (2) ON CHARACTERTICS Forward-Current Transfer Ratio 2N2604, UB 40 120 I = 10 Adc, V = 5.0Vdc C CE 2N2605, UB 100 300 2N2604, UB 60 180 I = 500 Adc, V = 5.0Vdc C CE 2N2605, UB 150 450 h FE I = 10mAdc, V = 5.0Vdc 2N2604, UB 40 160 C CE 2N2605, UB 100 400 I = 10mAdc, V = 5.0Vdc, T = -55C 2N2604, UB 15 C CE A 2N2605, UB 30 Collector-Emitter Saturation Voltage 0.3 I = 10mAdc, I = 500 Adc V Vdc CE(sat) C B Base-Emitter Saturation Voltage V Vdc I = 10mA, I = 500 Adc BE(sat) 0.7 0.9 C B DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Small-Signal Short-Circuit Input Impedance I = 1.0mAdc, V = 5.0Vdc, f = 1.0kHz 2N2604, UB 1.0 10 C CB h k ie 2N2605, UB 2.0 20 Small-Signal Open-Circuit Forward Current Output Admittance I = 1.0mAdc, V = 5.0Vdc, f = 1.0kHz 2N2604, UB 40 C CE h mhos oe 2N2605, UB 60 Small-Signal Short-Circuit Forward Current Transfer Ratio I = 1.0mAdc, V = 5.0Vdc, f = 1.0kHz 2N2604, UB 60 180 C CE h fe 2N2605, UB 150 450 Magnitude of Small-Signal Forward Current Transfer Ratio h I = 0.5mAdc, V = 5.0Vdc, f = 30MHz fe 1.0 8.0 C CE Output Capacitance 6.0 V = 5.0Vdc, I = 0, 100 kHz f 1.0MHz CB E C pF obo Noise Figure F 5.0 V = 5.0Vdc, I = 10 Adc, R = 10k , f = 100Hz CE C g 1 F 3.0 dB V = 5.0Vdc, I = 10 Adc, R = 10k , f = 1.0kHz 2 CE C g F 3.0 3 V = 5.0Vdc, I = 10 Adc, R = 10k , f = 10kHz CE C g (2) Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% T4-LDS-0092 Rev. 2 (101320) Page 2 of 4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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