X-On Electronics has gained recognition as a prominent supplier of 2N3019 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N3019 Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N3019 Microchip

2N3019 electronic component of Microchip
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See Product Specifications
Part No.2N3019
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN Transistor
Datasheet: 2N3019 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 14.784 ea
Line Total: USD 14.78 
Availability - 9
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
103
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 3
Multiples : 1
3 : USD 18.975
10 : USD 17.4375
25 : USD 16.975
50 : USD 16.5375
100 : USD 15.925
250 : USD 15.6875
500 : USD 15.45

9
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 14.784
100 : USD 14.762

103
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 4
Multiples : 1
4 : USD 23.2164
10 : USD 21.3354
25 : USD 20.7695
50 : USD 20.2341
100 : USD 19.4847

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
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We are delighted to provide the 2N3019 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N3019 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N3019 Qualified Levels: JAN, JANTX, LOW POWER NPN SILICON TRANSISTOR Compliant JANTXV, and JANS Qualified per MIL-PRF-19500/391 DESCRIPTION This 2N3019 NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website 2N3019 MECHANICAL and PACKAGING CASE: Hermetically sealed, kovar base, nickel cap. TERMINALS: Gold plate, solder dip (Sn63/Pb37) available upon request. NOTE: Solder dip will eliminate RoHS compliance. MARKING: Part number, date code, manufacturers ID and serial number. POLARITY: NPN. WEIGHT: Approximately 1.064 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N3019 Reliability Level JEDEC type number JAN = JAN level (see Electrical Characteristics JANTX = JANTX level table) JANTXV = JANTXV level JANS = JANS level Blank = Commercial SYMBOLS & DEFINITIONS Symbol Definition Frequency f Base current (dc) I B Emitter current (dc) I E T Ambient temperature A T Case temperature C V Collector to base voltage (dc) CB V Collector to emitter voltage (dc) CE V Emitter to base voltage (dc) EB T4-LDS-0185, Rev. 2 (121562) 2012 Microsemi Corporation Page 2 of 6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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