X-On Electronics has gained recognition as a prominent supplier of 2N3467L Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N3467L Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N3467L Microchip

2N3467L electronic component of Microchip
Images are for reference only
See Product Specifications
Part No.2N3467L
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP Transistor
Datasheet: 2N3467L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 14.1641 ea
Line Total: USD 1416.41

Availability - 0
MOQ: 100  Multiples: 100
Pack Size: 100
Availability Price Quantity
0
Ship by Fri. 02 Aug to Tue. 06 Aug
MOQ : 100
Multiples : 100
100 : USD 13.0525
500 : USD 13.0065
5000 : USD 12.5235

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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We are delighted to provide the 2N3467L from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N3467L and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TECHNICAL DATA PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/348 Devices Qualified Level JAN 2N3467 2N3468 JANTX 2N3467L 2N3468L JANTXV MAXIMUM RATINGS 2N3467 2N3468 Ratings Symbol Unit 2N3467L 2N3468L - Emitter Vol 40 50 V CEO TO - 39* (TO - - 40 50 V 2N3467, 2N3468 Emitter - 5.0 V EBO 1.0 I C 0 Total Power Dissipation T = +25 C 1.0 W A P 0 T T = +25 C 5.0 W C 0 - 55 to +175 C T T , op g 0 0 TO - 5* 1) Derate linearly 5.71 mW/ > +25 A 0 0 2) Derate linearly 28.6 mW/ > +25 C ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS - Emitter Breakdown Current 40 I V C 50 Emitter - Base Breakdown Current V EBO 5.0 I = 10 E - Emitter Breakdown Current 40 I V C CEO 50 - Base Cutoff Current I V = 30 Vdc 100 - Emitter Cutoff Current I 100 CEX V = 3.0 Vdc, V = 30 EB CE 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 1 of 2 Page nAdc Collector CB CBO Adc Collector 2N3468, L (BR) Vdc 2N3467, L = 10 mAdc Collector Adc (BR) Vdc 2N3468, L CBO (BR) Vdc 2N3467, L = 10 mAdc Collector package outline *See appendix A for C C for T 2N3467L, 2N3468L C C for T st Operating & Storage Junction Temperature Range (2) (1) Adc Collector Current Vdc Base Voltage CBO Vdc Base Voltage Collector 205AD) Vdc tage Collector 2N3467, L, 2N3468, L, JAN SERIES ELECTRICAL CHARACTERISTICS (cont) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (3) - Current Transf er Ratio I = 1.0 Vdc C CE 40 25 h I = 1.0 Vdc FE C CE 40 120 25 75 I = 1.0 Adc, V = 5.0 Vdc C CE 40 25 - Emitter Saturatio 0.35 I V C B CE(sat) 0.6 I C B 1.2 I C B Base - Emitter Saturation Voltage 1.0 I C B 0.8 1.2 V I BE(sat) C B 1.6 I = 100 C B DYNAMIC CHARACTERISTICS Output Capacitance C 25 obo V = 0, 100 kHz 1.0 MHz E I C CE f t 175 500 150 500 C 100 ibo V = 0, 100 kHz 1.0 MHz EB C SWITCHING CHARACTERISTICS t 10 ns I = 50 mAdc, V = 2 d C B1 EB t Rise Time 30 ns I = 50 mAdc, V = 2 r C B1 EB t 60 ns I = = I = 50 mAdc s C B1 B2 t Fall Time 30 ns I = I = 50 mAdc f C B1 B2 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 Page 2 of 2 = 100 mAdc, I 500 mAdc, I Storage Time = 500 mAdc, I = 500 mAdc, I Delay Time f = 0.5 Vdc, I pF Input Capacitance 2N3468, L 2N3467, L MHz = 10 Vdc, f = 100NHz = 50 mAdc, V Extrapolated Unity Gain Frequency CB f = 10 Vdc, I pF mAdc = 1.0 Adc, I = 50 mAdc = 500 mAdc, I Vdc = 15 mAdc = 150 mAdc, I = 100 mAdc = 1.0 Adc, I = 50 mAdc = 500 mAdc, I Vdc = 15 mAdc = 150 mAdc, I n Voltage Collector 2N3468, L 2N3467, L 2N3468, L 2N3467, L = 500 mAdc, V 2N3468, L 2N3467, L =150 mAdc, V Forward

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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