X-On Electronics has gained recognition as a prominent supplier of 2N3486A Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N3486A Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N3486A Microchip

2N3486A electronic component of Microchip
Images are for reference only
See Product Specifications
Part No.2N3486A
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP Transistor
Datasheet: 2N3486A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.2088 ea
Line Total: USD 7.21

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 1
Multiples : 1
1 : USD 7.2088
10 : USD 6.6782
100 : USD 6.3765
250 : USD 6.2489

0
Ship by Fri. 02 Aug to Tue. 06 Aug
MOQ : 1
Multiples : 1
1 : USD 10.1775
500 : USD 10.1545
5000 : USD 9.775

0
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 1
Multiples : 1
1 : USD 7.2088
10 : USD 6.6782
100 : USD 6.4709
250 : USD 6.3415

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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We are delighted to provide the 2N3486A from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N3486A and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TECHNICAL DATA PNP SILICON SMALL SIGNAL TRANSISTOR Qualified per MIL-PRF-19500/392 Devices Qualified Level JAN 2N3485A 2N3486A JANTX JANTXV MAXIMUM RATINGS 2N3485A Ratings Symbol 2N3486A Unit - Emitter Voltage 60 V CEO - 60 V Emitter - 5.0 V EBO 600 I C 0 Total Power Dissipation T = +25 C 0.4 W A P 0 T T = +25 C 2.0 W C 0 Temperature Range - 55 to +200 C T T , J THERMAL CHARACTERISTICS TO - 46* Characteristics Symbol Max. Unit (TO - 0 Thermal Resistance - - 0.439 R 0 - - Case 87 R 0 0 1) Derate linearly 2.28 mW/ C ab = +25 C A 0 0 2) Derate linearly 11.43 mW/ = +25 C C 0 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS - V 60 CEO I C - 10 V = 50 Vdc I 10 V = 60 Vdc Emitter - 50 V = 3.5 Vdc I EB EBO 10 V = 5.0 Vdc EB Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 1 of 2 Page 6 Lake Adc Adc Base Cutoff Current CB Adc CBO CB Adc Base Cutoff Current Collector = 10 mAdc (BR) Vdc Emitter Breakdown Voltage ector Coll package outline *See appendix A for C above T ove T JC C/W to Junction JA mC/W Ambient to Junction 206AB) stg Operating & Storage Junction (2) (1) mAdc Continuous -- Collector Current Vdc Base Voltage CBO Vdc Base Voltage lector Col Vdc Collector 2N3485A, 2N3486A JAN SERIES ELECTRICAL CHARACTERISTICS (cont) Characteristics Symbol Min. Max. Unit (3) ON CHARACTERISTICS - Current Transfer Ratio 40 I = 10 Vdc C CE 75 40 I = 10 Vdc C CE 100 40 I = 10 Vdc h C CE FE 100 40 120 I = 10 Vdc C CE 100 300 40 I = 10 Vdc C CE 50 - Emitter Saturation Voltage 0.4 I V C B CE(sat) 1.6 I B Base - Emitter Saturation Voltage 1.3 I = V C B BE(sat) 2.6 I C B DYNAMIC CHARACTERISTICS Small - Signal Forward Current Transfer Ratio h 40 I = 10 Vdc, f = 1.0 kHz C CE 100 Magnitude of Small - d Current Transfer Ratio h 2.0 10 I = 20 Vdc, f = 100 MHz C CE Output Capacitance C 8.0 obo V = 0, 100 kHz 1.0 MHz E 30 C ibo V = 0, 100 kHz 1.0 MHz EB C (3) Pulse Te st: Pulse Width = 300 2.0%. 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 Page 2 of 2 s, Duty Cycle f = 2.0 Vdc, I pF Input Capacitance CB f = 10 Vdc, I pF = 50 mAdc, V fe Signal Forwar 2N3486A fe 2N3485A = 1.0 mAdc, V = 50 mAdc = 500 mAdc, I Vdc = 15 mAdc 150 mAdc, I C = 50 mAdc = 500 mAdc, I Vdc = 15 mAdc = 150 mAdc, I Collector 2N3486A 2N3485A dc, V = 500 mA 2N3486A 2N3485A = 150 mAdc, V 2N3486A 2N3485A = 10 mAdc, V 2N3486A 2N3485A = 1.0 mAdc, V 2N3486A 2N3485A = 0.1 mAdc, V Forward

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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