X-On Electronics has gained recognition as a prominent supplier of 2N3500 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N3500 Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N3500 Microchip

2N3500 electronic component of Microchip
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See Product Specifications
Part No.2N3500
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 150 V 300 mA 1 W Through Hole TO-39 (TO-205AD)
Datasheet: 2N3500 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 7.3171 ea
Line Total: USD 7.32 
Availability - 9
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 7.3171
100 : USD 7.3065

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N3500 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N3500 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N3498 thru 2N3501 Qualified Levels: JAN, JANTX, JANTXV NPN SILICON TRANSISTOR Available on and JANS commercial Qualified per MIL-PRF-19500/366 versions DESCRIPTION This family of 2N3498 thru 2N3501 epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications. These devices are also available in TO-5 and low profile U4 packaging. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through- hole and surface-mount packages. Important: For the latest information, visit our website 2N3498 thru 2N3501 MECHANICAL and PACKAGING CASE: Hermetically sealed, kovar base, nickel cap. TERMINALS: Leads are kovar, nickel plated, and finish is solder dip (Sn63/Pb37). Can be RoHS compliant with pure matte-tin (commercial grade only). MARKING: Part number, date code, manufacturers ID. WEIGHT: Approximately 1.064 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N3498 (e3) Reliability Level RoHS Compliance JAN = JAN Level e3 = RoHS compliant (available JANTX = JANTX Level on commercial grade only) JANTXV = JANTXV Level Blank = non-RoHS compliant JANS = JANS level Blank = Commercial JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition Common-base open-circuit output capacitance C obo I Collector cutoff current, base open CEO I Collector cutoff current, circuit between base and emitter CEX I Emitter cutoff current, collector open EBO h Common-emitter static forward current transfer ratio FE V Collector-emitter voltage, base open CEO V Collector-emitter voltage, emitter open CBO V Emitter-base voltage, collector open EBO T4-LDS-0276, Rev. 1 (121221) 2012 Microsemi Corporation Page 2 of 7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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