X-On Electronics has gained recognition as a prominent supplier of 2N3700 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N3700 Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N3700 Microchip

2N3700 electronic component of Microchip
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See Product Specifications
Part No.2N3700
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN Transistor
Datasheet: 2N3700 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.884 ea
Line Total: USD 4.88 
Availability - 1444
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
407
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 5
Multiples : 1
5 : USD 6.625
25 : USD 5.9125
100 : USD 5.4125
250 : USD 5.3625
500 : USD 5.3125
1000 : USD 5.2625
2500 : USD 5.2
5000 : USD 5.15

1444
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 4.884
500 : USD 4.873
5000 : USD 4.697

41
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 10
Multiples : 1
10 : USD 7.41

407
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 10
Multiples : 5
10 : USD 8.957
25 : USD 7.9937
100 : USD 7.3177
250 : USD 7.2501
500 : USD 7.1825

9
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2
Multiples : 1
2 : USD 6.1763
100 : USD 5.6732

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Dc Current Gain Hfe Max
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

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We are delighted to provide the 2N3700 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N3700 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N3700 Qualified Levels: JAN, JANTX, Low Power NPN Silicon Transistor Available on JANTXV, and JANS commercial Qualified per MIL-PRF-19500/391 versions DESCRIPTION This 2N3700 NPN transistor comes in a hermetically sealed metal TO-18 package and is military qualified for high-reliability applications. Important: For the latest information, visit our website 2N3700 MECHANICAL and PACKAGING CASE: Hermetically sealed, nickel plated kovar base, nickel cap. TERMINALS: Gold plate over nickel, kovar for JANS. Gold plate over nickel, kovar, solder dipped for JAN, JANTX, and JANTXV. MARKING: Part number, date code, manufacturers ID. WEIGHT: Approximately 0.3 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N3700 (e4) Reliability Level RoHS Compliance JAN = JAN level e4 = RoHS compliant (without JANTX = JANTX level solder dip) JANTXV = JANTXV level Blank = non-RoHS compliant JANS = JANS level Blank = Commercial JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition Frequency f Base current (dc) I B Emitter current (dc) I E T Ambient temperature A T Case temperature C V Collector to base voltage (dc) CB V Collector to emitter voltage (dc) CE V Emitter to base voltage (dc) EB T4-LDS-0185-2, Rev. 1 (4/24/13) 2013 Microsemi Corporation Page 2 of 6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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