X-On Electronics has gained recognition as a prominent supplier of 2N3715 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N3715 Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N3715 Microchip

2N3715 electronic component of Microchip
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See Product Specifications
Part No.2N3715
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN Transistor
Datasheet: 2N3715 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 97.7634
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 65.7362
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 93.7457
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N3715 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N3715 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/408 Devices Qualified Level JAN 2N3715 2N3716 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N3715 2N3716 Units - Emitter Voltage 60 80 V CEO - 80 100 V Emitter - 7.0 V EBO Base Current I 4.0 B 10 I C 0 Total Power Dissipation T = 25 C 5.0 W A P T 0 T =100 85.7 W C 0 - 65 to +20 0 C T T , J THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit TO - 3* (TO - 0 Thermal Resistance, Junction - - Case 1.17 R 0 0 1) Derate linearly 28.57 mW/ >25 A 0 0 2) Derate linearly 0.857 W/ >100 C r 0 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS - Emitter Breakdown Current 60 I V C CEO 80 - Current 10 V I 10 V = 100 Vdc Emitter - V = 7.0 Vdc 1.0 I EBO - Emitter Cutoff Current 1.0 V = 1.5 Vdc, V = 60 Vdc I BE CE CEX 1.0 V = 1.5 Vdc, V = 80 Vdc 6 BE CE 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 1 of 2 Page 2N371 2N3715 mAdc Collector EB mAdc Base Breakdown Voltage CB 2N3716 CBO CB Adc 2N3715 = 80 Vdc Base Cutoff Collector 2N3716 (BR) 2N3715 = 10 mAdc Vdc Collector Package Outline *See Appendix A fo C C for T C C for T JC C/W to 204AA) stg Operating & Storage Junction Temperature Range C Adc Collector Current Adc Vdc Base Voltage CBO Vdc Base Voltage Collector Vdc Collector 2N3715, 2N3716 JAN SERIES ELECTRICAL CHARACTERISTICS (cont) Characteristics Symbol Min. Max. Unit - Emitter Cutoff Current 1.0 V = 60 Vdc I CE CES 1.0 V = 80 Vdc CE (3) ON CHARACTERISTICS - Current Transfer Ratio 50 150 I = 2.0 Vdc C CE 30 120 h I = 2.0 Vdc FE C CE 10 I = 2.0 Vdc C CE 5.0 I = 4.0 Vdc C CE - Emitter Saturation Voltage 1.0 I V C B CE(sat) 2.5 I C B Base - Emitter Saturation Voltage 1.5 I V C B BE(sat) 3.0 I C B DYNAMIC CHARACTERISTICS - Signal Short Circuit Forward Current Transfer Ratio 4.0 20 h I 1.0 MHz C CE Forward Current Transfer Ratio 30 300 I = 10 Vdc, f = 1.0 kHz h C CE Output Capacitance 500 V = 0, f = 1.0 MHz C E obo SAFE OPERATING AREA DC Tests 0 T = +25 1.0 s C Test 1 V = 15 CE C Test 2 V CE C Test 3 V CE C V CE C (3) Pulse Test: Pulse Width = 300 2.0%. 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 Page 2 of 2 s, Duty Cycle 2N3716 = 0.9 Adc = 65 Vdc, I 2N3715 = 0.9 Adc = 55 Vdc, I = 3.75 Adc = 40 Vdc, I = 10 Adc Vdc, I C, 1 Cycle, t CB = 10 Vdc, I pF fe = 0.5 Adc, V = 10 Vdc, f = 100 kHz = 0.5 Adc, V fe Magnitude of Common Emitter Small = 2.0 Adc = 10 Adc, I Vdc = 0.5 Adc = 5.0 Adc, I = 2.0 Adc = 10 Adc, I = 0.5 Adc = 5.0 Adc, I Vdc Collector = 10 Adc, V = 5.0 Adc, V = 3.0 Adc, V = 1.0 Adc, V Forward 2N3716 2N3715 mAdc Collector

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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