7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3719 APPLICATIONS: High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES: Collector-Emitter Sustaining Voltage: Silicon PNP V = 40 Vdc (Min) - 2N3719 CEO(SUS) Power Transistors DC Current Gain: h = 25-180 I = 1.0 Adc FE C Low Collector-Emitter Saturation Voltage: V = 0.75 Vdc I = 1.0 Adc CE(sat) C High Current-Gain - Bandwidth Product: f = 90 MHz (Typ) T DESCRIPTION:DESCRIPTION: These power transistors are produced by PPC s DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability TO-5 and long life. ABSOLUTE MAXIMUM RATINGS:ABSOLUTE MAXIMUM RATINGS: SYMBOL CHARACTERISTIC VALUE UNITS Collector-Emitter Voltage 40 Vdc V * CEO Collector-Base Voltage 40 Vdc V * CB Emitter-Base Voltage 4.0 Vdc V * EB Peak Collector Current 10 Adc I * C Continuous Collector Current 3.0 Adc I * C Base Current 0.5 Adc I * B Storage Temperature -65 to 200 C T * STG Operating Junction Temperature -65 to 200 T * C J Total Device Dissipation 6.0 Watts P * D T = 25C C Derate above 25C 34.3 mW/C Total Device Dissipation 1.0 Watts P * D T = 25C A Derate above 25C 5.71 mW/C JC Thermal Resistance Junction to Case 29 C/W Junction to Ambient 175 C/W * Indicates JEDEC registered Data. MSC1026.PDF 02-24-992N3719 ELECTRICAL CHARACTERISTICS:ELECTRICAL CHARACTERISTICS: (25Case Temperature Unless Otherwise Noted) VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Units Min. Max. Collector-Emitter 40 ---- Vdc I = 20 mAdc, I = 0 (Note 1) C B V CEO(sus)* Sustaining Voltage Collector Cutoff Current ---- 10 I * V = 40 Vdc, V = 2.0 Vdc Adc CEX CE BE(off) ---- 1.0 m Adc V = 40 Vdc, V = 2.0 Vdc, T = 150C CE BE(off) C I Collector Cutoff Current V = 40 Vdc, I = 0 ---- 10 Adc CBO* CB E I * Emitter Cutoff Current ---- 1.0 m Adc EBO V = 4.0 Vdc, I = 0 BE C DC Current Gain 20 ---- ---- hFE* I = 500 mAdc, V = 1.5 Vdc C CE (Note 1) I = 1.0 Adc, V = 1.5 Vdc C CE 25 180 ---- ---- ---- I = 1.0 Adc, V = 1.5 Vdc, T = - 40C 15 C CE C Collector-Emitter V * I = 1.0 Adc, I = 100 mAdc, T = - 40C to + 100C ---- 0.75 Vdc CE(sat) C B C Saturation Voltage I = 3.0 Adc, I = 300 mAdc, T = - 40C to + 100C ---- 1.5 Vdc C B C (Note 1) Base-Emitter Saturation ---- 1.5 Vdc I = 1.0 Adc, I = 100 mAdc, T = - 40C to + 100C C B C Voltage V * BE(sat) I = 3.0 Adc, I = 300 mAdc, T = - 40C to + 100C C B C Vdc ---- 2.3 (Note 1) Current-Gain Bandwidth 60 ---- MHz I = 500 mAdc, V = 10 Vdc, f = 30 MHz C CE test f * Product T (Note 2) Output Capacitance ---- 120 pF C * V = 10 Vdc, I = 0, f = 0.1 MHz ob CB E Input Capacitance ---- 1000 pF C * V = 0.5 Vdc, I = 0, f = 0.1 MHz ib EB C Turn-on Time ---- 100 ns t * V = 12 Vdc, V (off) = 0, I = 1.0 Adc, I = 0.1 Adc on CC BE C B1 Turn-off Time t * V = 12 Vdc, I = 1.0 Adc, I = I = 100 mAdc ---- 400 ns off CC C B1 B2 Note 1: Pulse Test: Pulse width 300S, Duty Cycle = 2.0%. Note 2: f = h * f T fe test * Indicates JEDEC registered data MSC1026.PDF 02-24-99