7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3740A APPLICATIONS: Drivers Switches Medium-Power Amplifiers FEATURES: Medium Power Low Saturation Voltage: 0.6 V I = 1.0 Amp CE(sat) C High Gain Characteristics: hFE I = 250 mA: 30-100 C PNP Transistors Excellent Safe Area Limits Low Collector Cutoff Current: 100 nA (Max) 2N3740A DESCRIPTION:DESCRIPTION: These power transistors are produced by PPC s DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount TO-66 techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life. ABSOLUTE MAXIMUM RATINGS:ABSOLUTE MAXIMUM RATINGS: SYMBOL CHARACTERISTIC VALUE UNITS Collector-Emitter Voltage 60 Vdc V * CEO Emitter-Base Voltage 7.0 Vdc V * EB Collector-Base Voltage 60 Vdc V * CB I * Peak Collector Current 10 Adc C I * Continuous Collector Current 4.0 Adc C Base Current 2.0 Adc I * B Storage Temperature -65 to 200 T * C STG Operating Junction Temperature -65 to 200 C T * J Total Device Dissipation 25 Watts P * D T = 25C C 0.143 W/C Derate above 25C 7 C/W JC Thermal Impedance * Indicates JEDEC registered data. MSC1040.PDF 03-12-992N3740A ELECTRICAL CHARACTERISTICS:ELECTRICAL CHARACTERISTICS: (25Case Temperature Unless Otherwise Noted) VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Units Min. Max. Collector-Emitter 60 ---- Vdc V I = 100 mAdc, I = 0 (Note 1) CEO(sus)* C B Sustaining Voltage Emitter Base Cutoff ---- 100 nAdc I V = 7.0 Vdc EB0* EB Current Collector Cutoff Current ---- 100 nAdc I V = 60 Vdc, V = 1.5 Vdc CEX* CE BE(off) V = 40 Vdc, V = 1.5 Vdc, T = 150C ---- 0.5 mAdc CE BE(off) C Collector-Emitter Cutoff ---- 1.0 Adc I * V = 40 Vdc, I = 0 CEO CE B Current Collector Base Cutoff ---- 100 nAdc I V = 60 Vdc, I = 0 CBO* CB E Current DC Current Gain 40 ---- ---- h * I = 100 mAdc, V = 1.0 Vdc FE C CE (Note 1) 30 100 ---- I = 250 mAdc, V = 1.0 Vdc C CE 20 ---- ---- I = 500 mAdc, V = 1.0 Vdc C CE I = 1.0 Adc, V = 1.0 Vdc 10 ---- ---- C CE Collector-Emitter ---- 0.6 Vdc V * I = 1.0 Adc, I = 125 mAdc CE(sat) C B Saturation Voltage (Note 1) Base-Emitter Voltage ---- 1.0 Vdc V I = 250 mAdc, V = 1.0 Vdc BE* C CE (Note 1) Current Gain Bandwidth 3.0 ---- MHz f * I = 100 mAdc, V = 10 Vdc, f = 1.0 MHz T C CE Product Small-Signal Current 25 ---- ---- h * I = 50 mAdc, V = 10 Vdc, f = 1.0 kHz fe C CE Gain ---- 100 pF C V = 10 Vdc, I = 0, f = 100 kHz Common Base Output ob* CB C Capacitance Note 1: Pulse Test: PW 300s, Duty Cycle 2.0% * Indicates JEDEC registered data. MSC1040.PDF 03-12-99